Two-step sintering strategy for tailoring microstructure and electrical properties in ZnO-V2O5-MnO low-sintering-temperature varistor ceramics
摘要
ZnO-V2O5 -based ceramics have garnered significant interest as low-temperature co-fired varistor materials. However, their practical application remains constrained by insufficient nonlinear coefficients and elevated leakage current densities. This study addresses these limitations through innovative processing by fabricating 97.5 mol%ZnO-0.5 mol%V2O5-2.0 mol% MnO (ZnVMnO) ceramics using a two-step sintering strategy alongside conventional single-step sintering for comparative analysis. Comprehensive characterization reveals that both sintering protocols yield ceramics comprising a ZnO matrix with ZnV2O4 and Zn3(VO4)2 secondary phases. Notably, the two-step sintering process demonstrates remarkable efficacy in suppressing oxygen vacancy concentrations, which effectively controls ZnO grain growth and eliminates abnormal grain growth phenomena. The two-step sintered ceramic (ZnVMnO-TS) achieved a nonlinear coefficient (α) of 37, a leakage current density (JL) of 82 μA/cm2, and a breakdown field (E1mA) of 332 V/mm. These values represent substantial improvements compared to the conventionally sintered ceramic (ZnVMnO-CS: α = 32, JL = 106 μA/cm2, E1mA = 305 V/mm). The proposed methodology provides valuable insights for engineering cost-effective, high-performance surge protection devices compatible with multilayer ceramic capacitor manufacturing processes.