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<p>To fabricate cesium iodide (CsI)-based devices on Si(100) substrates, CsI thin films were deposited under optimized conditions at a sputtering power of 50 W and a constant argon pressure of 10 mTorr. These CsI films were comprehensively characterized for crystallinity, morphology, and optical and electrical properties using GIXRD, FE-SEM, I–V characterization, and Hall-effect measurements. The results indicated that the CsI films crystallized in a BCC structure, with dominant (110) and (211) planes and a lattice constant of 4.5581 ± 0.0058 Å, along with the compressive strain of −&#xa0;2.2%. Hall-effect measurements further demonstrated that the CsI films exhibit p-type semiconducting behavior, with a carrier concentration of 2.3 × 10<sup>12</sup> cm⁻<sup>3</sup> and a resistivity of 7.84 × 10<sup>5</sup> Ω·cm. For alpha detection applications, a 3-μm CsI/n-Si diode structure was fabricated, successfully achieving PN junction characteristics with a turn-on voltage of  + 1.5 V and a breakdown voltage of −&#xa0;2.6 V. COMSOL simulations revealed that applying a reverse bias of −&#xa0;3 V maximizes the depletion region and electric field at the CsI/Si interface, enabling effective detection of alpha particles across a broad energy range from 0.50 to 5.49 MeV, with optimal performance for 1.47 MeV alpha particles from the <sup>10</sup>B(n,α)<sup>7</sup>Li reaction. This finding suggests strong potential for further development of compact neutron detectors in conjunction with a boron conversion screen.</p>

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Sputtered CsI thin films on silicon substrates and their simulation-based radiation detection potential

  • 期刊论文

  • 发表日期：

    2025年8月26日

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  • Pariwat Limthanameteekul,
  • Phannee Saengkaew,
  • Kamontip Ploykrachang,
  • Sirasit Sreesai,
  • Decho Thong-Aram,
  • Prutthipong Tsuppayakorn-aek,
  • Thiti Bovornratanaraks,
  • Mati Horprathum,
  • Tossaporn Lertvanithphol,
  • Kittidhaj Dhanasiwawong,
  • Tuksadon Wutikhun

摘要

To fabricate cesium iodide (CsI)-based devices on Si(100) substrates, CsI thin films were deposited under optimized conditions at a sputtering power of 50 W and a constant argon pressure of 10 mTorr. These CsI films were comprehensively characterized for crystallinity, morphology, and optical and electrical properties using GIXRD, FE-SEM, I–V characterization, and Hall-effect measurements. The results indicated that the CsI films crystallized in a BCC structure, with dominant (110) and (211) planes and a lattice constant of 4.5581 ± 0.0058 Å, along with the compressive strain of − 2.2%. Hall-effect measurements further demonstrated that the CsI films exhibit p-type semiconducting behavior, with a carrier concentration of 2.3 × 1012 cm⁻3 and a resistivity of 7.84 × 105 Ω·cm. For alpha detection applications, a 3-μm CsI/n-Si diode structure was fabricated, successfully achieving PN junction characteristics with a turn-on voltage of  + 1.5 V and a breakdown voltage of − 2.6 V. COMSOL simulations revealed that applying a reverse bias of − 3 V maximizes the depletion region and electric field at the CsI/Si interface, enabling effective detection of alpha particles across a broad energy range from 0.50 to 5.49 MeV, with optimal performance for 1.47 MeV alpha particles from the 10B(n,α)7Li reaction. This finding suggests strong potential for further development of compact neutron detectors in conjunction with a boron conversion screen.