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<p>This research investigates the optoelectronic feature of an Au/PVA:Gd<sub>2</sub>O<sub>3</sub>/n-Si Schottky photodiode under both dark conditions and varying levels of illumination. A thin film of polyvinyl alcohol (PVA) doped with gadolinium oxide (Gd<sub>2</sub>O<sub>3</sub>) is applied at the metal–semiconductor junction, forming a metal–nanocomposite–semiconductor configuration. The Gd<sub>2</sub>O<sub>3</sub> nanostructures are characterized by Fourier transform infrared (FTIR) and attenuated total reflection (ATR) techniques. Key optoelectrical parameters like reverse saturation current (I<sub>0</sub>), barrier height (Φ<sub>B0</sub>), ideality factor (n), series resistance (R<sub>s</sub>), shunt resistance (R<sub>sh</sub>), interface trap density (N<sub>ss</sub>), photocurrent (I<sub>ph</sub>), photosensitivity (S), responsivity (R), and specific detectivity (D<sup>*</sup>) are extracted. Results show that with increasing light intensity, I<sub>0</sub> and n rise while Φ<sub>B0</sub> and R<sub>s</sub> decrease. The photocurrent exhibits a linear trend with illumination at zero bias, and the presence of the PVA:Gd<sub>2</sub>O<sub>3</sub> interlayer significantly enhances photosensitivity (≈37), responsivity (up to 1487 mA/W), and detectivity (≈2.16 × 10<sup>10</sup> Jones). These findings represent that the Au/PVA:Gd<sub>2</sub>O<sub>3</sub>/n-Si structure is a promising candidate for next-generation photovoltaic and optoelectronic applications.</p>

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Characterization of Au/PVA:Gd2O3/n-Si Schottky structure in dark and under illumination

  • 期刊论文

  • 发表日期：

    2025年8月24日

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  • Yashar Azizian-Kalandaragh,
  • Kübranur Tutku Ugip

摘要

This research investigates the optoelectronic feature of an Au/PVA:Gd2O3/n-Si Schottky photodiode under both dark conditions and varying levels of illumination. A thin film of polyvinyl alcohol (PVA) doped with gadolinium oxide (Gd2O3) is applied at the metal–semiconductor junction, forming a metal–nanocomposite–semiconductor configuration. The Gd2O3 nanostructures are characterized by Fourier transform infrared (FTIR) and attenuated total reflection (ATR) techniques. Key optoelectrical parameters like reverse saturation current (I0), barrier height (ΦB0), ideality factor (n), series resistance (Rs), shunt resistance (Rsh), interface trap density (Nss), photocurrent (Iph), photosensitivity (S), responsivity (R), and specific detectivity (D*) are extracted. Results show that with increasing light intensity, I0 and n rise while ΦB0 and Rs decrease. The photocurrent exhibits a linear trend with illumination at zero bias, and the presence of the PVA:Gd2O3 interlayer significantly enhances photosensitivity (≈37), responsivity (up to 1487 mA/W), and detectivity (≈2.16 × 1010 Jones). These findings represent that the Au/PVA:Gd2O3/n-Si structure is a promising candidate for next-generation photovoltaic and optoelectronic applications.