<p>Synthesis of the environmentally friendly [(Bi<sub>0.5-x</sub>Pr<sub>x</sub>Na<sub>0.5</sub>)<sub>0.94</sub>Ba<sub>0.06</sub>]<sub>0.975</sub>Sr<sub>0.025</sub>TiO<sub>3</sub> system through conventional solid-state reaction method was carried out at praseodymium concentrations ranging over 0–1.5&#xa0;mol%. In this work, the structural, dielectric, vibrational, and photoluminescence (PL) properties of this system are presented. X-ray diffraction (XRD) confirmed the high crystallinity of all compositions with no detectable impurity phases. Structural analysis revealed that Pr<sup>3+</sup> doping does not alter the morphotropic phase boundary (MPB) observed in the undoped material (<i>x</i> = 0, referred to as BNBTS25:00), indicating stability in the phase structure despite cation substitution. Raman spectroscopy studies confirmed the successful incorporation of Pr<sup>3+</sup> into the A-site lattice of the pristine BNBTS25:00 material and supported the morphotropic phase identified by XRD analysis. The Pr<sup>3+</sup> substitution significantly improves the dielectric properties of&#xa0;BNBTS25:00. The depolarization temperature (<i>T</i><sub>d</sub>), marking the ferroelectric (FE) to antiferroelectric (AFE) phase transition, shifts&#xa0;toward room temperature&#xa0;with increasing Pr<sup>3+</sup> content. Moreover, doping not only preserves the low dielectric loss of BNBTS25:00 but also enhances its relaxor behavior, as evidenced by an increase in the empirical parameter Δ<i>T</i><sub>dif</sub> with Pr<sup>3</sup>⁺ content. In contrast to undoped&#xa0;BNBTS25:00, Pr<sup>3+</sup> doping induces a&#xa0;strong single red emission peak at ~ 610 nm&#xa0;when the sample is excited at 488 nm. The peak position is shifted to shorter wavelengths by increasing Pr<sup>3+</sup> content, and this effect is attributed to changes in the local crystal field around Pr<sup>3+</sup> ions. In addition, Pr<sup>3+</sup>-doped BNBTS25:00 red-emitting materials, with their enhanced dielectric properties, are promising candidates for multifunctional applications, particularly in optoelectronic devices and light-emitting diodes (LEDs).</p>

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Enhancement of dielectric and photoluminescence responses in [(Bi0.5Na0.5)0.94Ba0.06]0.975Sr0.025TiO3 ceramic through Pr3⁺ doping: implications for advanced materials applications

  • N. Zorgui,
  • Z. Abdelkafi,
  • N. Abdelmoula,
  • H. Khemakhem

摘要

Synthesis of the environmentally friendly [(Bi0.5-xPrxNa0.5)0.94Ba0.06]0.975Sr0.025TiO3 system through conventional solid-state reaction method was carried out at praseodymium concentrations ranging over 0–1.5 mol%. In this work, the structural, dielectric, vibrational, and photoluminescence (PL) properties of this system are presented. X-ray diffraction (XRD) confirmed the high crystallinity of all compositions with no detectable impurity phases. Structural analysis revealed that Pr3+ doping does not alter the morphotropic phase boundary (MPB) observed in the undoped material (x = 0, referred to as BNBTS25:00), indicating stability in the phase structure despite cation substitution. Raman spectroscopy studies confirmed the successful incorporation of Pr3+ into the A-site lattice of the pristine BNBTS25:00 material and supported the morphotropic phase identified by XRD analysis. The Pr3+ substitution significantly improves the dielectric properties of BNBTS25:00. The depolarization temperature (Td), marking the ferroelectric (FE) to antiferroelectric (AFE) phase transition, shifts toward room temperature with increasing Pr3+ content. Moreover, doping not only preserves the low dielectric loss of BNBTS25:00 but also enhances its relaxor behavior, as evidenced by an increase in the empirical parameter ΔTdif with Pr3⁺ content. In contrast to undoped BNBTS25:00, Pr3+ doping induces a strong single red emission peak at ~ 610 nm when the sample is excited at 488 nm. The peak position is shifted to shorter wavelengths by increasing Pr3+ content, and this effect is attributed to changes in the local crystal field around Pr3+ ions. In addition, Pr3+-doped BNBTS25:00 red-emitting materials, with their enhanced dielectric properties, are promising candidates for multifunctional applications, particularly in optoelectronic devices and light-emitting diodes (LEDs).