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<p>ZnO/Ag/ZnO, ZnO/Ti-doped Ag/ZnO, ZnO/Ag/Ti/ZnO films are prepared to investigate the influence of interlayer structure on the electrical, optical and chemical stability performance of ZnO-based sandwich transparent conducting films. The introduction of Ti to Ag can promote the migration of Ag atoms, resulting in a more continuous surface and refined grains. When Ti is sputtered on ultrathin Ag layer, Ti atoms fill the gaps between isolated Ag islands to make the surface morphology more continuous and uniform. The continuous surface of Ag layer is in favor for lowing sheet resistance and enhancing transmittance. The <i>FoM</i> value of ZnO/Ag/Ti/ZnO and ZnO/Ti-doped Ag/ZnO films are 272 and 254, respectively, which is larger than that of ZnO/Ag/ZnO (79) films. When all prepared films were placed in an environment with a temperature of 85&#xa0;℃ and a relative humidity of 85% for 24&#xa0;h, the sheet resistance change rate of ZnO/Ti-doped Ag/ZnO film (60%) and ZnO/Ag/Ti/ZnO (100%) films is lower than that of ZnO/Ag/ZnO (250%) films. After immersion in a 1wt% NaCl solution for 270&#xa0;min, the sheet resistance change rate of the ZnO/Ag/Ti/ZnO (33%) and ZnO/Ti-doped Ag/ZnO (23%) films is also significantly lower than that of the ZnO/Ag/ZnO film (191%) due to the influence of surface morphology. These results show that both the electrical, optical and chemical stability of ZnO/Ag/ZnO film can been enhanced by replacing Ag layer using Ag/Ti bilayer or Ti-doped Ag layer.</p>

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The influence of interlayer structure on the electrical, optical and chemical stability performance of ZnO-based sandwich transparent conducting films

  • 期刊论文

  • 发表日期：

    2025年8月2日

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  • Lijun Song,
  • DiHui Zhang,
  • Guoxin Li,
  • Qianxiu Ding,
  • Yajun You,
  • Haoran Zheng,
  • Xinna Zhang,
  • Pan Yang,
  • Shihui Yu

摘要

ZnO/Ag/ZnO, ZnO/Ti-doped Ag/ZnO, ZnO/Ag/Ti/ZnO films are prepared to investigate the influence of interlayer structure on the electrical, optical and chemical stability performance of ZnO-based sandwich transparent conducting films. The introduction of Ti to Ag can promote the migration of Ag atoms, resulting in a more continuous surface and refined grains. When Ti is sputtered on ultrathin Ag layer, Ti atoms fill the gaps between isolated Ag islands to make the surface morphology more continuous and uniform. The continuous surface of Ag layer is in favor for lowing sheet resistance and enhancing transmittance. The FoM value of ZnO/Ag/Ti/ZnO and ZnO/Ti-doped Ag/ZnO films are 272 and 254, respectively, which is larger than that of ZnO/Ag/ZnO (79) films. When all prepared films were placed in an environment with a temperature of 85 ℃ and a relative humidity of 85% for 24 h, the sheet resistance change rate of ZnO/Ti-doped Ag/ZnO film (60%) and ZnO/Ag/Ti/ZnO (100%) films is lower than that of ZnO/Ag/ZnO (250%) films. After immersion in a 1wt% NaCl solution for 270 min, the sheet resistance change rate of the ZnO/Ag/Ti/ZnO (33%) and ZnO/Ti-doped Ag/ZnO (23%) films is also significantly lower than that of the ZnO/Ag/ZnO film (191%) due to the influence of surface morphology. These results show that both the electrical, optical and chemical stability of ZnO/Ag/ZnO film can been enhanced by replacing Ag layer using Ag/Ti bilayer or Ti-doped Ag layer.