Mn doping effects of Zn7-xMnxSb2O12 ceramics: a comprehensive analysis of structural, varistor, and dielectric properties
摘要
In our study, Zn7-xMnxSb2O12 (x = 0, 0.1, 0.2, 0.3, 0.4) ceramics with various amounts of Mn were prepared by coprecipitation method. The structural and electrical properties were analyzed by X-ray diffraction (XRD), EDS analysis, and an impedance analyzer. The XRD has confirmed the existence of the pure Zn7Sb2O12 spinel phase in Zn7-xMnxSb2O12 ceramics. With an increase in the Mn content of the additive from x = 0 to 0.4, the peaks of Zn7Sb2O12 considerably weaken. This fact suggests that the crystallinity may increase with the increase in Mn concentration in the host structure. The molar ratio Zn:Sb:O is about 7:2:12 and the occurrence of O2−, Zn2+, Sb3+, and Mn2+ in Zn7-xMnxSb2O12 have been confirmed by the EDS spectrum. As the relative density increases, the Zn7-xMnxSb2O12 ceramics with x = 0.4 exhibited the maximum leakage current density (7.2μA/cm2) and the nonlinear coefficient decreases from 16.6 (x = 0) to 8.7 (x = 0.4). The impedance spectroscopy has also been used to find samples with x = 0.3 exhibited the maximum grain boundary (Rgb = 19.73 MΩ·cm) among other doped samples. The Ea value of the Zn7-xMnxSb2O12 ceramics is found to decrease from 1.32 eV (x = 0) to 1.03 eV (x = 0.4) due to the increase in oxygen vacancy concentration. All ceramics have a non-Debye relaxation phenomenon. These findings introduce Zn7-xMnxSb2O12 ceramics for new applications in varistor devices.