Here, we investigate the effect of Mn doping on the structural and magnetoelectric properties of trigonal-structured GaFeO3 with the composition Ga1-xMnxFeO3 (x = 0.05, 0.10, and 0.15). Rietveld refinement of XRD data reveals a single-phase trigonal \(R\overline{3 }c\) structure with no impurities till Mn doping level of 15%. The refinement also shows a significant increase in lattice strain with doping. Phase purity and slight changes in the lattice were further confirmed by FTIR and Raman spectroscopy. FESEM analysis indicates the presence of multiple grains of varying shapes, with a rod-like structure becoming more prominent as Mn concentration increases. Magnetic data confirms the ferrimagnetic nature of the samples at room temperature. Temperature-dependent magnetization measurements show a marked deviation from the parent GFO sample, exhibiting spin-canted AFM ordering at low temperatures. With Mn doping, the samples exhibit an increase in leakage current density (~ 10⁻5 A/cm2). Frequency-dependent dielectric measurements demonstrate that Mn doping enhances the dielectric constant. At room temperature, the samples exhibit linear magnetoelectric coupling, with the ME coupling coefficient increasing slightly as the Mn concentration rises.
