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<p>This study investigates the formation and optimization of ohmic contacts on in-situ grown Silicon Nitride (SiN<sub>x</sub>) on AlN/GaN high electron mobility transistors (HEMTs) for high-frequency applications. Using the standard Ti/Al/Ni/Au metal scheme, the achieved contact resistance (R<sub>C</sub>) is 0.14 Ω·mm, with a sheet resistance (R<sub>SH</sub>) of 629 Ω/□ and specific contact resistance of 1.2 × 10<sup>−6</sup> Ω·cm<sup>2</sup>. The high-temperature annealing of the contact induces the interfacial reaction between the Ti and underlying SiN<sub>x</sub> layer, leading to titanium silicide (Ti<sub>x</sub>Si<sub>y</sub>) complexes and titanium nitride (TiN). The annealing of the contact was done using rapid thermal process (RTP) in N<sub>2</sub> ambient, and 800&#xa0;°C for 60&#xa0;s was found to give the best contact resistance. The same ohmic contact is used to realize the HEMT device with a gate length (L<sub>g</sub>) of 200&#xa0;nm and a source-drain spacing (L<sub>sd</sub>) of 4&#xa0;µm, achieving a maximum drain current (I<sub>D</sub>) of 1.02A/mm at V<sub>ds</sub> = 1&#xa0;V with on-resistance (R<sub>ON</sub>) 4.2 Ω·mm and a peak transconductance (g<sub>max</sub>) of 340 mS/mm.</p>

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Role of in-situ SiNx in ohmic contact realization in AlN/GaN HEMTs

  • 期刊论文

  • 发表日期：

    2025年7月29日

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  • Chanchal,
  • Niraj Kumar,
  • Amit,
  • Robert Laishram,
  • Sonalee Kapoor,
  • D. S. Rawal,
  • Manoj Saxena

摘要

This study investigates the formation and optimization of ohmic contacts on in-situ grown Silicon Nitride (SiNx) on AlN/GaN high electron mobility transistors (HEMTs) for high-frequency applications. Using the standard Ti/Al/Ni/Au metal scheme, the achieved contact resistance (RC) is 0.14 Ω·mm, with a sheet resistance (RSH) of 629 Ω/□ and specific contact resistance of 1.2 × 10−6 Ω·cm2. The high-temperature annealing of the contact induces the interfacial reaction between the Ti and underlying SiNx layer, leading to titanium silicide (TixSiy) complexes and titanium nitride (TiN). The annealing of the contact was done using rapid thermal process (RTP) in N2 ambient, and 800 °C for 60 s was found to give the best contact resistance. The same ohmic contact is used to realize the HEMT device with a gate length (Lg) of 200 nm and a source-drain spacing (Lsd) of 4 µm, achieving a maximum drain current (ID) of 1.02A/mm at Vds = 1 V with on-resistance (RON) 4.2 Ω·mm and a peak transconductance (gmax) of 340 mS/mm.