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<p>Non-stoichiometric cadmium sulfide (CdS) thin films were successfully deposited using a single solid-source precursor via the metal–organic chemical vapor deposition technique. Compositional analysis by Rutherford backscattering spectrometry confirmed cadmium-rich deviations from stoichiometry. X-ray diffraction revealed that the films were nanocrystalline with a predominant hexagonal phase, while scanning electron microscopy showed uniformly distributed grains and a compact microstructure, contributing to both thermal and morphological stability. Temperature-dependent resistance measurements revealed a clear positive temperature coefficient behavior, with resistance increasing from 293&#xa0;K to approximately 373&#xa0;K, and corresponding temperature coefficients ranging between 0.00324 and 0.00647&#xa0;K. A resistance plateau observed near 400&#xa0;K indicates saturation of the sensor response, suggesting stable operation at elevated temperatures. These findings demonstrate that non-stoichiometric CdS thin films exhibit reliable thermistor characteristics, holding promise for integration into solid-state thermal sensor devices.</p>

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Thermistor behavior of non-stoichiometric cadmium sulfide thin films

  • 期刊论文

  • 发表日期：

    2025年7月23日

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  • Adebowale Clement Adebisi,
  • Moses Sesan Eluyemi,
  • Joseph Onyeka Emegha,
  • Frank Efe,
  • Marcus Adebola Eleruja,
  • Bolutife Olofinjana

摘要

Non-stoichiometric cadmium sulfide (CdS) thin films were successfully deposited using a single solid-source precursor via the metal–organic chemical vapor deposition technique. Compositional analysis by Rutherford backscattering spectrometry confirmed cadmium-rich deviations from stoichiometry. X-ray diffraction revealed that the films were nanocrystalline with a predominant hexagonal phase, while scanning electron microscopy showed uniformly distributed grains and a compact microstructure, contributing to both thermal and morphological stability. Temperature-dependent resistance measurements revealed a clear positive temperature coefficient behavior, with resistance increasing from 293 K to approximately 373 K, and corresponding temperature coefficients ranging between 0.00324 and 0.00647 K. A resistance plateau observed near 400 K indicates saturation of the sensor response, suggesting stable operation at elevated temperatures. These findings demonstrate that non-stoichiometric CdS thin films exhibit reliable thermistor characteristics, holding promise for integration into solid-state thermal sensor devices.