Scholarlink

<p>In this study, firstly, the structural analysis of CuMn alloy was discussed in detail using a scanning electron microscope (SEM), X-ray diffraction diffractometer (XRD), and vibrating sample magnetometer (VSM) techniques. Then, a new Schottky-type Cu-based CuMn/p-Si diode was obtained using CuMn alloy. To investigate its electrical properties, current–voltage (I–V), current–time (I–t), and capacitance–voltage (C–V) characterization measurements of the prepared diode were performed. Capacitance–voltage-frequency (C–V-f) and conductance–voltage-frequency (G–V-f) measurements were analyzed at room temperature, in the frequency range of 10&#xa0;kHz-1&#xa0;MHz and voltage range (± 5&#xa0;V). Series resistance (R<sub>s</sub>)–V graph was obtained using C and G values. Observations from the (R<sub>s</sub>)–V graph showed that peaks could be seen at low frequencies but disappeared as the frequency increased. Such a peaking character is ascribed to a particular arrangement of the interface state densities arising at lower frequency values. The distribution of the interface state density (N<sub>SS</sub>) was estimated with frequency and voltage both Hill-Coleman and High-Low Frequency Capacitance (C<sub>HF</sub>–C<sub>LF</sub>) methods. An increase in frequency leaded to a reduction in the N<sub>SS</sub> values. The key electrical data of the diode, i.e., diffusion potential (<i>V</i><sub>D</sub>), energy of Fermi level (<i>E</i><sub>F</sub>), barrier height (<i>Φ</i><sub>B</sub>), depletion layer thickness (W<sub>d</sub>), doping acceptor atoms (<i>N</i><sub>A</sub>), and maximum electric field (<i>E</i><sub>m</sub>) developed in the junction were attained from the intercept and slope of the reverse bias linear C<sup>−2</sup>–V plot with frequency. The analysis revealed that the acquired data of the diod exhibited a strong frequency dependence.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Experimental investigations on the electrical and magnetic properties of a CuMn/p-Si-type Schottky diode

  • 期刊论文

  • 发表日期：

    2025年7月28日

查看全文
  • E. Aldirmaz,
  • M. Güler,
  • E. Güler

摘要

In this study, firstly, the structural analysis of CuMn alloy was discussed in detail using a scanning electron microscope (SEM), X-ray diffraction diffractometer (XRD), and vibrating sample magnetometer (VSM) techniques. Then, a new Schottky-type Cu-based CuMn/p-Si diode was obtained using CuMn alloy. To investigate its electrical properties, current–voltage (I–V), current–time (I–t), and capacitance–voltage (C–V) characterization measurements of the prepared diode were performed. Capacitance–voltage-frequency (C–V-f) and conductance–voltage-frequency (G–V-f) measurements were analyzed at room temperature, in the frequency range of 10 kHz-1 MHz and voltage range (± 5 V). Series resistance (Rs)–V graph was obtained using C and G values. Observations from the (Rs)–V graph showed that peaks could be seen at low frequencies but disappeared as the frequency increased. Such a peaking character is ascribed to a particular arrangement of the interface state densities arising at lower frequency values. The distribution of the interface state density (NSS) was estimated with frequency and voltage both Hill-Coleman and High-Low Frequency Capacitance (CHF–CLF) methods. An increase in frequency leaded to a reduction in the NSS values. The key electrical data of the diode, i.e., diffusion potential (VD), energy of Fermi level (EF), barrier height (ΦB), depletion layer thickness (Wd), doping acceptor atoms (NA), and maximum electric field (Em) developed in the junction were attained from the intercept and slope of the reverse bias linear C−2–V plot with frequency. The analysis revealed that the acquired data of the diod exhibited a strong frequency dependence.