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<p>This study investigates the elaboration of ZnO thin layers using a simple co-precipitation process, both in their pure form and with nickel (Ni) incorporation, followed by spin-coating onto silicon (Si) substrates. The research aims to evaluate how varying levels of Ni incorporation influence the films' structural, morphological, and opto-electronic properties. Analytical techniques including X-ray diffraction (XRD) and atomic force microscopy (AFM) were used to examine the surface morphology and crystal structure. To evaluate surface passivation and reflectivity and Fourier-transform infrared spectroscopy (FTIR) measurements were carried out on both Ni:ZnO and pure ZnO films. Significantly, Ni incorporation lead to in a substantial improvement of the lifetime values, from 2&#xa0;μs to 82&#xa0;μs at a carrier density of 10<sup>14</sup>&#xa0;cm⁻<sup>3</sup>. Additionally, the reflectance at 500&#xa0;nm was dramatically reduced starting 31% to around 5% upon coating Ni-incorporated ZnO on Si substrates.</p>

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Enhanced optoelectronic performance of Ni-incorporated ZnO nanoparticles on silicon substrates

  • 期刊论文

  • 发表日期：

    2025年7月27日

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  • Moez Salem,
  • Amel Haouas,
  • Abdullah Almohammedi,
  • Hajar Ghannam

摘要

This study investigates the elaboration of ZnO thin layers using a simple co-precipitation process, both in their pure form and with nickel (Ni) incorporation, followed by spin-coating onto silicon (Si) substrates. The research aims to evaluate how varying levels of Ni incorporation influence the films' structural, morphological, and opto-electronic properties. Analytical techniques including X-ray diffraction (XRD) and atomic force microscopy (AFM) were used to examine the surface morphology and crystal structure. To evaluate surface passivation and reflectivity and Fourier-transform infrared spectroscopy (FTIR) measurements were carried out on both Ni:ZnO and pure ZnO films. Significantly, Ni incorporation lead to in a substantial improvement of the lifetime values, from 2 μs to 82 μs at a carrier density of 1014 cm⁻3. Additionally, the reflectance at 500 nm was dramatically reduced starting 31% to around 5% upon coating Ni-incorporated ZnO on Si substrates.