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<p>This study investigates the effect of MgO doping on the structural, electrical, and dielectric properties of BaTiO<sub>3</sub> for thermistor and high-temperature capacitor applications. XRD confirmed a cubic perovskite structure for undoped BaTiO<sub>3</sub> (BTM0) and the presence of secondary phases in BTM10, indicating partial reduction of TiO<sub>2</sub> due to MgO. SEM and EDS analyses revealed grain growth and successful Mg incorporation, with a slight decrease in Ba (from 56.88% to 53.65%) and an increase in Ti (from 21.88% to 23.67%) content. Electrical measurements showed a clear PTCR effect, with Rmax increasing from 235,650 Ω to 293,872 Ω and ΔR rising from 230,286 Ω to 291,017 Ω as doping increased from 0 to 10 mol%, while Ramb remained stable between 3537 Ω and 5098 Ω. Dielectrically, the permittivity peaked at ~ 6000 for BTM0 and slightly lower for doped samples (~ 5000), with BTM10 exhibiting the highest dielectric loss (~ 1.2) at 300 °C. The enhanced PTCR behavior and thermal stability confirm that MgO-doped BaTiO<sub>3</sub> is a promising material for thermistors and high-temperature electronic applications.</p>

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Enhanced positive temperature coefficient of resistance characteristics and dielectric analysis of magnesium-doped barium titanate ceramics

  • 期刊论文

  • 发表日期：

    2025年7月28日

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  • Samira Boumous,
  • Zouhir Boumous,
  • Fellah Mamoun,
  • Majeed Ali Habeeb,
  • Faiçal Kharchouche,
  • M. A. Abdelkawy,
  • Ashour M. Ahmed,
  • Maha Awjan Alreshidi

摘要

This study investigates the effect of MgO doping on the structural, electrical, and dielectric properties of BaTiO3 for thermistor and high-temperature capacitor applications. XRD confirmed a cubic perovskite structure for undoped BaTiO3 (BTM0) and the presence of secondary phases in BTM10, indicating partial reduction of TiO2 due to MgO. SEM and EDS analyses revealed grain growth and successful Mg incorporation, with a slight decrease in Ba (from 56.88% to 53.65%) and an increase in Ti (from 21.88% to 23.67%) content. Electrical measurements showed a clear PTCR effect, with Rmax increasing from 235,650 Ω to 293,872 Ω and ΔR rising from 230,286 Ω to 291,017 Ω as doping increased from 0 to 10 mol%, while Ramb remained stable between 3537 Ω and 5098 Ω. Dielectrically, the permittivity peaked at ~ 6000 for BTM0 and slightly lower for doped samples (~ 5000), with BTM10 exhibiting the highest dielectric loss (~ 1.2) at 300 °C. The enhanced PTCR behavior and thermal stability confirm that MgO-doped BaTiO3 is a promising material for thermistors and high-temperature electronic applications.