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<p>In this study, we presented a novel GOI photodetector integrating a 4-period SiO<sub>2</sub>/Si distributed Bragg reflector (DBR) within the buried oxide layer to enhance the optical confinement effect and improve the detection efficiency. The device architecture was systematically optimized using finite-difference time-domain (FDTD) simulations in conjunction with transfer matrix method (TMM) analysis, achieving outstanding reflectivity of 99.63% at 1310&#xa0;nm and 99.65% at 1550&#xa0;nm. The proposed photodetector was fabricated via a standard CMOS-compatible process, and its electrical and optical characteristics were comprehensively evaluated. Experimental results demonstrated dual-wavelength responsivity of 0.86&#xa0;A/W at 1310&#xa0;nm and 1.02&#xa0;A/W at 1550&#xa0;nm, with an additional peak responsivity of 1.159&#xa0;A/W at 1421&#xa0;nm due to the spectral enhancement induced by the periodic DBR structure. Furthermore, the device exhibited an exceptionally low dark current density of 4.1&#xa0;mA/cm<sup>2</sup> at −&#xa0;1&#xa0;V bias, which is significantly lower than that of conventional GOI photodetectors, demonstrating superior responsivity and noise performance. For the 4-period DBR device, peak quantum efficiencies at 1310&#xa0;nm and 1550&#xa0;nm were 80.4%, and 81.6%, respectively. These findings underscore the effectiveness of DBR integration in GOI photodetectors for SWIR applications, providing an effective approach to enhance the performance of multispectral imaging and optical communication compared to conventional GOI photodetectors.</p>

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High-responsivity GOI PIN photodetectors with periodic SiO2/Si DBR structures for SWIR imaging application

  • 期刊论文

  • 发表日期：

    2025年8月25日

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  • Jiahan Yu,
  • Xuewei Zhao,
  • Libin Liu,
  • Jiale Su,
  • Junhao Du,
  • Hongxiao Lin,
  • Yuanhao Miao,
  • Tianchun Ye,
  • Henry H. Radamson

摘要

In this study, we presented a novel GOI photodetector integrating a 4-period SiO2/Si distributed Bragg reflector (DBR) within the buried oxide layer to enhance the optical confinement effect and improve the detection efficiency. The device architecture was systematically optimized using finite-difference time-domain (FDTD) simulations in conjunction with transfer matrix method (TMM) analysis, achieving outstanding reflectivity of 99.63% at 1310 nm and 99.65% at 1550 nm. The proposed photodetector was fabricated via a standard CMOS-compatible process, and its electrical and optical characteristics were comprehensively evaluated. Experimental results demonstrated dual-wavelength responsivity of 0.86 A/W at 1310 nm and 1.02 A/W at 1550 nm, with an additional peak responsivity of 1.159 A/W at 1421 nm due to the spectral enhancement induced by the periodic DBR structure. Furthermore, the device exhibited an exceptionally low dark current density of 4.1 mA/cm2 at − 1 V bias, which is significantly lower than that of conventional GOI photodetectors, demonstrating superior responsivity and noise performance. For the 4-period DBR device, peak quantum efficiencies at 1310 nm and 1550 nm were 80.4%, and 81.6%, respectively. These findings underscore the effectiveness of DBR integration in GOI photodetectors for SWIR applications, providing an effective approach to enhance the performance of multispectral imaging and optical communication compared to conventional GOI photodetectors.