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<p>This study explores the effect of annealing duration (10, 20, 30, and 40 min) on the properties of Indium Sulfide (<i>β</i>-In<sub>2</sub>S<sub>3</sub>) thin films. The films were fabricated by annealing indium thin films in a sulfur-rich environment via chemical vapor deposition (CVD) method. Raman spectroscopy revealed enhanced peak intensities for <i>β</i>-In<sub>2</sub>S<sub>3</sub> vibrational modes, indicating improved structural coherence. Photoluminescence measurements showed a notable increase in excitonic emission intensity, with a peak at 2.15&#xa0;eV becoming more pronounced after 40 min of annealing. Additionally, UV–Visible absorption demonstrated both a Burstein–Moss shift and Drude absorption behavior, alongside a significant increase in the optical bandgap, reaching values of 1.66&#xa0;eV, 1.82&#xa0;eV, and 2.2&#xa0;eV for annealing durations of 20, 30, and 40 min, respectively. First-principles calculations using VASP confirmed the direct bandgap nature of <i>β</i>-In<sub>2</sub>S<sub>3</sub>, with HSE06 calculations yielding a bandgap of 2.0&#xa0;eV, closely aligning with experimental observations. These findings underscore the crucial role of annealing time in optimizing β-In<sub>2</sub>S<sub>3</sub> thin films for advanced applications in photovoltaics, optoelectronics, and sensing technologies, where high crystallinity and superior optical properties are essential for device efficiency and reliability.</p>

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Effect of annealing time treatment on structural and optical properties of In2S3 thin films for optoelectronic devices and sensor technologies application

  • 期刊论文

  • 发表日期：

    2025年7月30日

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  • Elbadawy A. Kamoun,
  • Asia R. Y. Almuhana,
  • Amany S. El-Khouly,
  • A. H. Ammar,
  • A. A. M. Farag,
  • Ahsan Javed,
  • Ahmed I. Ali,
  • Dongwhi Choi,
  • Yasair Al-Faiyz,
  • Ibrahim Elghamry

摘要

This study explores the effect of annealing duration (10, 20, 30, and 40 min) on the properties of Indium Sulfide (β-In2S3) thin films. The films were fabricated by annealing indium thin films in a sulfur-rich environment via chemical vapor deposition (CVD) method. Raman spectroscopy revealed enhanced peak intensities for β-In2S3 vibrational modes, indicating improved structural coherence. Photoluminescence measurements showed a notable increase in excitonic emission intensity, with a peak at 2.15 eV becoming more pronounced after 40 min of annealing. Additionally, UV–Visible absorption demonstrated both a Burstein–Moss shift and Drude absorption behavior, alongside a significant increase in the optical bandgap, reaching values of 1.66 eV, 1.82 eV, and 2.2 eV for annealing durations of 20, 30, and 40 min, respectively. First-principles calculations using VASP confirmed the direct bandgap nature of β-In2S3, with HSE06 calculations yielding a bandgap of 2.0 eV, closely aligning with experimental observations. These findings underscore the crucial role of annealing time in optimizing β-In2S3 thin films for advanced applications in photovoltaics, optoelectronics, and sensing technologies, where high crystallinity and superior optical properties are essential for device efficiency and reliability.