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<p>The UV detectors play a prominent role in the flame sensing, missile plume detection, and environmental monitoring. Among many candidates favoring the detection in UV region, the high dark current limits and impedes the usage. Zinc oxide (ZnO) is an excellent candidate for UV detection, here, firstly attempt have been made to grow hexagonal nanoflakes (HNFs) on <i>p</i>-Si substrates using mist chemical vapor deposition (mist CVD). Its wide band gap (~ 3.37&#xa0;eV), high exciton binding energy (~ 60&#xa0;meV), and chemical stability along with growth time tuning via mist CVD strongly influence the diode performance. Thus, a metal–semiconductor–metal (MSM) photodiode configuration of ZnO was designed to assess the photodetection properties. The ZnO hexagonal wurtzite structure with native phonon modes, as well as hexagonal nanoflakes (HNFs) like morphology, was observed. The broad emission peaks of deep levels confirm the device has more defect-mediated states which ambiguously favors the photodetector performance. The observed carrier concentration and mobility are the additional advantages of the deposited ZnO nanofilms (NFs) to favor in the figure of merit of the photodetector. The resulting <i>p</i>-Si/<i>n</i>-ZnO photodiodes exhibit higher spectral responsivity of ~ 200&#xa0;mA/W which is significant compared to the traditionally reported responsivity values. This high spectral responsivity can be attributed to the superior light absorption and carrier generation facilitated by the ZnO nanoflakes. The <i>p–n</i> junction between the ZnO layer and the <i>p</i>-Si substrate ensured efficient charge separation, reducing recombination losses and enhancing responsivity. This work highlights the potential of ZnO nanostructures for developing efficient, cost-effective, and reliable UV photodetectors, suitable for applications in environmental monitoring, security, and space exploration.</p>

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Mist CVD-derived ZnO hexagonal nanoflakes: impact of growth time engineering on solar-blind UV photodetection performance

  • 期刊论文

  • 发表日期：

    2025年8月2日

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  • R. Aysha Parveen,
  • E. Vinoth,
  • K. Hara,
  • S. Harish,
  • S. Ponnusamy

摘要

The UV detectors play a prominent role in the flame sensing, missile plume detection, and environmental monitoring. Among many candidates favoring the detection in UV region, the high dark current limits and impedes the usage. Zinc oxide (ZnO) is an excellent candidate for UV detection, here, firstly attempt have been made to grow hexagonal nanoflakes (HNFs) on p-Si substrates using mist chemical vapor deposition (mist CVD). Its wide band gap (~ 3.37 eV), high exciton binding energy (~ 60 meV), and chemical stability along with growth time tuning via mist CVD strongly influence the diode performance. Thus, a metal–semiconductor–metal (MSM) photodiode configuration of ZnO was designed to assess the photodetection properties. The ZnO hexagonal wurtzite structure with native phonon modes, as well as hexagonal nanoflakes (HNFs) like morphology, was observed. The broad emission peaks of deep levels confirm the device has more defect-mediated states which ambiguously favors the photodetector performance. The observed carrier concentration and mobility are the additional advantages of the deposited ZnO nanofilms (NFs) to favor in the figure of merit of the photodetector. The resulting p-Si/n-ZnO photodiodes exhibit higher spectral responsivity of ~ 200 mA/W which is significant compared to the traditionally reported responsivity values. This high spectral responsivity can be attributed to the superior light absorption and carrier generation facilitated by the ZnO nanoflakes. The p–n junction between the ZnO layer and the p-Si substrate ensured efficient charge separation, reducing recombination losses and enhancing responsivity. This work highlights the potential of ZnO nanostructures for developing efficient, cost-effective, and reliable UV photodetectors, suitable for applications in environmental monitoring, security, and space exploration.