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<p>With the advent of millimeter-wave (mmWave) communication technologies, the demand for ceramic substrates, which are low dielectric permittivity (<i>ε</i><sub><i>r</i></sub>) and high quality factor (<i>Q*f</i>), has become more and more critical. Nevertheless, materials that meet both requirements, especially at low sintering temperatures, remain elusive. In this work, we presented the novel (Mg₁₋ₓZnₓ)₂SiO₄ solid-solution ceramic system synthesized via the spray-drying method and optimized chemical composition for mmWave substrate applications. By systematically varying the Zn/Mg ratios (<i>x</i> = 0.4–0.7), we successfully tailored phase evolution, suppressed secondary phase formation, and achieved sinterability at a lower temperature. The X-ray diffraction and scanning electron microscopy analyses confirmed the formation of a high-purity phase with a uniform microstructure, particularly for the sample of <i>x</i> = 0.7, demonstrating excellent densification. Notably, the composition of (Mg<sub>0.3</sub>Zn<sub>0.7</sub>)₂SiO₄ achieved the high <i>Q*f</i> value of ~ 54,000&#xa0;GHz and the low <i>ε</i><sub><i>r</i></sub> of ~ 5.57, which becomes one of the potential candidates for low-loss and high-frequency dielectric applications.</p>

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Synthesis and dielectric studies of (Mg₁₋xZnx)2SiO4 (0.4 ≤ x ≤ 0.7) for substrate applications

  • 期刊论文

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  • 发表日期：

    2025年7月23日

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  • Dwi Fortuna Anjusa Putra,
  • Tzung-Yuan Wu,
  • Li-Heng Tai,
  • Shao-Ju Shih

摘要

With the advent of millimeter-wave (mmWave) communication technologies, the demand for ceramic substrates, which are low dielectric permittivity (εr) and high quality factor (Q*f), has become more and more critical. Nevertheless, materials that meet both requirements, especially at low sintering temperatures, remain elusive. In this work, we presented the novel (Mg₁₋ₓZnₓ)₂SiO₄ solid-solution ceramic system synthesized via the spray-drying method and optimized chemical composition for mmWave substrate applications. By systematically varying the Zn/Mg ratios (x = 0.4–0.7), we successfully tailored phase evolution, suppressed secondary phase formation, and achieved sinterability at a lower temperature. The X-ray diffraction and scanning electron microscopy analyses confirmed the formation of a high-purity phase with a uniform microstructure, particularly for the sample of x = 0.7, demonstrating excellent densification. Notably, the composition of (Mg0.3Zn0.7)₂SiO₄ achieved the high Q*f value of ~ 54,000 GHz and the low εr of ~ 5.57, which becomes one of the potential candidates for low-loss and high-frequency dielectric applications.