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<p>This study explores the impact of different metal contacts—Aluminum (Al), Silver (Ag), and Gold (Au)—on the performance of silicon nanowire-based (SiNW-based) metal semiconductor metal (MSM) devices. The silicon nanowires (SiNWs) synthesized via metal-catalyzed chemical etching (MCCE), and confirm the structural analysis through FESEM, TEM, and SAED pattern. Raman spectroscopy has been used to estimate average SiNW diameter using the bond polarizability model. Also, validation of single-crystalline nature and crystallite size estimation has been carried out through XRD analysis. The electrical properties of MSM devices were examined under the Schottky contact formation, showing forward and reverse bias currents for Al, Ag, and Au contacts at ± 5&#xa0;V, respectively. This research aims to elucidate the choice of contact material influences device performance, including aspects like conductivity, carrier mobility, and overall efficiency for next-generation technologies.</p>

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Tailoring and optimizing the role of metal contacts (Al, Ag, Au) on carrier mobility, conductivity and efficiency of silicon nanowire-based metal–semiconductor–metal devices

  • 期刊论文

  • 发表日期：

    2025年7月28日

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  • Anand Kumar,
  • Vikas Kashyap,
  • Vivek Kumar,
  • Avadhesh Kumar Sharma,
  • Kapil Saxena

摘要

This study explores the impact of different metal contacts—Aluminum (Al), Silver (Ag), and Gold (Au)—on the performance of silicon nanowire-based (SiNW-based) metal semiconductor metal (MSM) devices. The silicon nanowires (SiNWs) synthesized via metal-catalyzed chemical etching (MCCE), and confirm the structural analysis through FESEM, TEM, and SAED pattern. Raman spectroscopy has been used to estimate average SiNW diameter using the bond polarizability model. Also, validation of single-crystalline nature and crystallite size estimation has been carried out through XRD analysis. The electrical properties of MSM devices were examined under the Schottky contact formation, showing forward and reverse bias currents for Al, Ag, and Au contacts at ± 5 V, respectively. This research aims to elucidate the choice of contact material influences device performance, including aspects like conductivity, carrier mobility, and overall efficiency for next-generation technologies.