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<p>Ternary chalcogenides with ordered vacancy defect chalcopyrite structures are promising materials for advanced optoelectronic applications due to their tunable properties and stability. This study reports the synthesis of n-type CdIn<sub>2</sub>Se<sub>4</sub> polycrystalline material using the melt oscillation method, followed by single-crystal growth via a custom-built vertical Bridgman-Stockbarger technique. The lattice parameters and phase formation of the grown single crystal were confirmed using both single-crystal and powder X-ray diffraction techniques. The optical bandgap is narrow at about 1.5, which was determined using a Tauc plot, making it suitable for optoelectronic applications. Fourier-transform infrared (FTIR) spectroscopic findings demonstrate the transmission exceeding 50%, enabling applications in optical parametric conversion, LIDAR sensors, and mid-infrared lasers. Thermal properties, elemental composition, and electrical characteristics of the crystal were thoroughly investigated across the top, middle, and bottom sections. The transmittance of the crystal is found to be very good (above 45%), and the melting point of CdIn<sub>2</sub>Se<sub>4</sub> is 896&#xa0;°C.&#xa0;Furthermore, it is found that the damage threshold values for single and multiple&#xa0;shots were, respectively, 64.6 GW/cm<sup>−2</sup> and 43.2 GW/cm<sup>−2</sup> (for 30&#xa0;s). Additionally, dielectric and photoconductivity properties were evaluated, highlighting the material’s potential for high-performance optoelectronic devices.</p>

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An ordered vacancy defect chalcopyrite-structured CdIn2Se4 single crystal: a feasible n-type semiconductor material for optoelectronic applications

  • 期刊论文

  • 发表日期：

    2025年7月24日

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  • M. Magesh,
  • P. Vijayakumar,
  • P. Ramasamy,
  • S. Sahaya Jude Dhas,
  • Mohammed T. Alotaibi

摘要

Ternary chalcogenides with ordered vacancy defect chalcopyrite structures are promising materials for advanced optoelectronic applications due to their tunable properties and stability. This study reports the synthesis of n-type CdIn2Se4 polycrystalline material using the melt oscillation method, followed by single-crystal growth via a custom-built vertical Bridgman-Stockbarger technique. The lattice parameters and phase formation of the grown single crystal were confirmed using both single-crystal and powder X-ray diffraction techniques. The optical bandgap is narrow at about 1.5, which was determined using a Tauc plot, making it suitable for optoelectronic applications. Fourier-transform infrared (FTIR) spectroscopic findings demonstrate the transmission exceeding 50%, enabling applications in optical parametric conversion, LIDAR sensors, and mid-infrared lasers. Thermal properties, elemental composition, and electrical characteristics of the crystal were thoroughly investigated across the top, middle, and bottom sections. The transmittance of the crystal is found to be very good (above 45%), and the melting point of CdIn2Se4 is 896 °C. Furthermore, it is found that the damage threshold values for single and multiple shots were, respectively, 64.6 GW/cm−2 and 43.2 GW/cm−2 (for 30 s). Additionally, dielectric and photoconductivity properties were evaluated, highlighting the material’s potential for high-performance optoelectronic devices.