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<p>The successive ionic layer adsorption and reaction technique was employed to deposit copper (Cu) at different concentrations into cadmium sulfide (CdS) quantum dots (QDs) on a TiO<sub>2</sub>-coated fluorine-doped tin oxide (FTO) substrate. The successful deposition and doping of copper were verified through powder X-ray diffraction analysis, which confirmed the distinct peaks of CdS, TiO<sub>2</sub>, and FTO, and elemental mapping and analysis showed the distribution of copper within the CdS QDs. The optical band gap of the un-doped and Cu-doped CdS samples was determined, revealing changes in the electronic properties upon Cu-doping. Photovoltaic performance analysis demonstrated that un-doped CdS QDs exhibited an efficiency (<i>η</i>) of 0.43%, while the Cu-doped CdS QDs achieved significantly improved results, with the 5&#xa0;mM% Cu-doped CdS QDs showing a remarkable efficiency (<i>η</i>) of 1.59%, a short circuit current density (<i>J</i><sub>sc</sub>) of 3.62&#xa0;mA/cm<sup>2</sup>, an open circuit voltage (<i>V</i><sub>oc</sub>) of 0.74&#xa0;V, and a fill factor of 59.5%. The ideality factor (<i>n</i>) and barrier height (<i>Φ</i><sub>b</sub>) were calculated based on the current–voltage (<i>I</i>–<i>V</i>) properties, revealing the influence of Cu-doping on the electrical characteristics of the cells. This work presents a novel approach to enhancing the performance of CdS-based photovoltaic devices by copper doping, demonstrating significant improvements in efficiency and offering valuable insights for the development of more efficient quantum dot-sensitized solar cells. The findings suggest potential applications in next-generation solar technologies, where improving the efficiency of CdS-based materials can contribute to more cost-effective and high-performance devices.</p>

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Enhanced photovoltaic performance of Cu-doped CdS quantum dots for solar cell applications: a deposition using SILAR technique

  • 期刊论文

  • 发表日期：

    2025年7月20日

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  • C. Kamal,
  • Max Savio,
  • A. Nancy Anna Anasthasiya,
  • Karuppiah Veerathangam,
  • Mohamed Abbas,
  • P. Umarani,
  • K. Ganesh Kumar,
  • M. Ammal Dhanalakshmi

摘要

The successive ionic layer adsorption and reaction technique was employed to deposit copper (Cu) at different concentrations into cadmium sulfide (CdS) quantum dots (QDs) on a TiO2-coated fluorine-doped tin oxide (FTO) substrate. The successful deposition and doping of copper were verified through powder X-ray diffraction analysis, which confirmed the distinct peaks of CdS, TiO2, and FTO, and elemental mapping and analysis showed the distribution of copper within the CdS QDs. The optical band gap of the un-doped and Cu-doped CdS samples was determined, revealing changes in the electronic properties upon Cu-doping. Photovoltaic performance analysis demonstrated that un-doped CdS QDs exhibited an efficiency (η) of 0.43%, while the Cu-doped CdS QDs achieved significantly improved results, with the 5 mM% Cu-doped CdS QDs showing a remarkable efficiency (η) of 1.59%, a short circuit current density (Jsc) of 3.62 mA/cm2, an open circuit voltage (Voc) of 0.74 V, and a fill factor of 59.5%. The ideality factor (n) and barrier height (Φb) were calculated based on the current–voltage (I–V) properties, revealing the influence of Cu-doping on the electrical characteristics of the cells. This work presents a novel approach to enhancing the performance of CdS-based photovoltaic devices by copper doping, demonstrating significant improvements in efficiency and offering valuable insights for the development of more efficient quantum dot-sensitized solar cells. The findings suggest potential applications in next-generation solar technologies, where improving the efficiency of CdS-based materials can contribute to more cost-effective and high-performance devices.