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<p>The present work deals with the improved output voltage characteristics of Triboelectric Nanogenerator (TENG) devices with the incorporation of SmFeO<sub>3</sub>-PVDF as a layer and exposure with UV radiation. A constant concentration of TiO<sub>2</sub> (4 wt%) and two devices with varying SmFeO<sub>3</sub> (1 wt% and 2 wt%) concentrations were examined. The findings demonstrate that larger SmFeO<sub>3</sub> concentrations result in higher voltage outputs. Device 1 containing 1 wt% SmFeO<sub>3</sub> achieved a voltage output of 99.6&#xa0;V without UV and 111.3&#xa0;V with UV exposure, while device 2 with 2 wt% SmFeO<sub>3</sub> content produced a voltage output of 105.5&#xa0;V without UV and 123.0&#xa0;V with UV exposure. This implies that a greater SmFeO<sub>3</sub> concentration causes more charges to be generated and separated, which raises the output voltage. Consequently, by taking advantage of this phenomenon, greater voltage outputs may be produced and a better TENG device may be designed.</p>

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Enhancing voltage output in triboelectric nanogenerators through SmFeO3 concentration in PVDF and UV-light exposure

  • 期刊论文

  • 发表日期：

    2025年7月17日

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  • Prabhakar Yadav,
  • Arpit Verma,
  • Kuldeep Sahay,
  • Bal Chandra Yadav

摘要

The present work deals with the improved output voltage characteristics of Triboelectric Nanogenerator (TENG) devices with the incorporation of SmFeO3-PVDF as a layer and exposure with UV radiation. A constant concentration of TiO2 (4 wt%) and two devices with varying SmFeO3 (1 wt% and 2 wt%) concentrations were examined. The findings demonstrate that larger SmFeO3 concentrations result in higher voltage outputs. Device 1 containing 1 wt% SmFeO3 achieved a voltage output of 99.6 V without UV and 111.3 V with UV exposure, while device 2 with 2 wt% SmFeO3 content produced a voltage output of 105.5 V without UV and 123.0 V with UV exposure. This implies that a greater SmFeO3 concentration causes more charges to be generated and separated, which raises the output voltage. Consequently, by taking advantage of this phenomenon, greater voltage outputs may be produced and a better TENG device may be designed.