<p>This study presented a comprehensive characterization of bismuth(III) iodide (BiI₃) through X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FESEM) with energy-dispersive X-ray spectroscopy (EDS), differential scanning calorimetry (DSC), and thermogravimetric analysis (TGA). The results were demonstrated that BiI₃ exhibited thermally activated AC conductivity following the correlated barrier hopping (CBH) model, with binding energy (W_M) decreasing from 0.98 to 0.48 eV as temperature increases from 300 to 435 K. Frequency-dependent dielectric measurements were revealed decreasing dielectric constant (<i>ε</i>′) and loss (<i>ε</i>″) with increasing frequency, while temperature-dependent studies were showed an opposite trend. Electric modulus analysis was indicated non-Debye relaxation behavior, supported by the close correspondence between dielectric relaxation (0.276 eV) and DC conductivity (0.285 eV) activation energies, suggesting similar underlying mechanisms. Impedance spectroscopy data were successfully modeled using an equivalent electrical circuit. These findings established BiI₃ as a promising material for energy storage applications, particularly in batteries and supercapacitors, due to its unique electrical and dielectric properties</p>