<p>The properties of conjugated polymer (CP)-based electronic devices are largely dependent on the crystallinity and morphology in the corresponding polymer thin-film layers. This study investigates the role of post-deposition thermal annealing on the nanoscale morphology and charge transport properties of poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-<i>b</i>]thiophene] (PBTTT) thin films. By systematically annealing PBTTT thin films near their melting point, we demonstrate that melt annealing enhances molecular aggregation, crystallinity, and molecular orientation, similar to or greater than that of annealing below the melting temperatures. However, melt annealing disrupts intercrystalline connectivity, resulting in a substantial degradation in charge carrier mobility. Atomic force microscopy characterization reveals that melt-annealed films consist of poorly connected semicrystalline aggregates, which hinder charge transport. These findings underscore the crucial role of intercrystalline connectivity in melt-annealed CP films, highlighting its impact on charge transport efficiency beyond crystallinity and molecular aggregation. This work provides new insights into the processing–structure–property relationships of high-molecular-weight CPs and emphasizes the importance of controlled annealing conditions in optimizing device performance.</p>

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Effect of post-annealing on carrier mobility of PBTTT film: an intercrystalline connectivity perspective

  • Qing Zhang,
  • Jianping Huang,
  • Xinfang Hu,
  • Lian Zhou,
  • Yi Yao,
  • Fangfang You,
  • Faqiang Xu,
  • Wenhua Zhang

摘要

The properties of conjugated polymer (CP)-based electronic devices are largely dependent on the crystallinity and morphology in the corresponding polymer thin-film layers. This study investigates the role of post-deposition thermal annealing on the nanoscale morphology and charge transport properties of poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT) thin films. By systematically annealing PBTTT thin films near their melting point, we demonstrate that melt annealing enhances molecular aggregation, crystallinity, and molecular orientation, similar to or greater than that of annealing below the melting temperatures. However, melt annealing disrupts intercrystalline connectivity, resulting in a substantial degradation in charge carrier mobility. Atomic force microscopy characterization reveals that melt-annealed films consist of poorly connected semicrystalline aggregates, which hinder charge transport. These findings underscore the crucial role of intercrystalline connectivity in melt-annealed CP films, highlighting its impact on charge transport efficiency beyond crystallinity and molecular aggregation. This work provides new insights into the processing–structure–property relationships of high-molecular-weight CPs and emphasizes the importance of controlled annealing conditions in optimizing device performance.