<p>Amorphous-to-crystalline phase-change technology is a promising candidate for high-density, low-power memory. The volume change associated with the phase-change is several percent, and understanding it is extremely important. The deformation of the phase-change region was investigated using an "optical" phase-shifting interferometric microscope (PSI), a "physical" stylus profilometer, and an atomic force microscope (AFM). The crystallized regions of the amorphous Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> film (thickness ~ 200&#xa0;nm) irradiated with laser light became concave, and the depth depended on the light energy density. At the laser energy density of ~ 9.0&#xa0;J/mm<sup>2</sup>, the depth was ~ 15&#xa0;nm using PSI and ~ 10&#xa0;nm using a stylus. The result that PSI overestimates the depth can be explained by the difference in the complex refractive index <i>n</i> + i<i>k</i> of the phase-change film. This is useful information when optically evaluating the shape of a phase-change region.</p>

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Depth measurement of phase-change patterns formed in Ge–Sb–Te films by an interferometric microscope

  • Kentaro Sugawara,
  • Tamihiro Gotoh

摘要

Amorphous-to-crystalline phase-change technology is a promising candidate for high-density, low-power memory. The volume change associated with the phase-change is several percent, and understanding it is extremely important. The deformation of the phase-change region was investigated using an "optical" phase-shifting interferometric microscope (PSI), a "physical" stylus profilometer, and an atomic force microscope (AFM). The crystallized regions of the amorphous Ge2Sb2Te5 film (thickness ~ 200 nm) irradiated with laser light became concave, and the depth depended on the light energy density. At the laser energy density of ~ 9.0 J/mm2, the depth was ~ 15 nm using PSI and ~ 10 nm using a stylus. The result that PSI overestimates the depth can be explained by the difference in the complex refractive index n + ik of the phase-change film. This is useful information when optically evaluating the shape of a phase-change region.