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<p>This paper uses the spray pyrolysis method to report the fabrication of graphene-doped copper zinc sulfide (CZS:Gr) thin films, investigating their structural, optical, and electrical properties. The phase composition, microstructure, surface homogeneity, and elemental composition were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive X-ray spectroscopy (EDX), respectively. XRD analysis confirms graphene-induced lattice strain and substitutional doping, reducing crystallite size from 45&#xa0;nm (0.125% Gr) to ~ 35&#xa0;nm (1% Gr), while SEM reveals a transformation from heterogeneous “flower petal” grains to uniform spherical nanoparticles. The influence of synthesis conditions on the thin layers’ transmittance, reflectance, and PL properties was also studied. Optical analysis shows near-zero transmittance (~ 2%) and minimal reflectance, indicating superior light absorption. Furthermore, the electrical performance of CZS: Gr films was assessed by electrochemical impedance spectroscopy (EIS) and Hall effect measurement. Optimal doping at 0.75% Gr yields exceptional electrical performance: Hall effect measurements demonstrate a carrier mobility of 1.4 × 10<sup>4</sup>&#xa0;cm<sup>2</sup>&#xa0;V⁻<sup>1</sup>&#xa0;s⁻<sup>1</sup>, bulk carrier concentration of 7.8 × 10<sup>21</sup>&#xa0;cm⁻<sup>3</sup>, and reduced resistivity (5.69 × 10⁻<sup>3</sup>&#xa0;Ω&#xa0;cm). EIS further corroborates enhanced charge transport, with charge transfer resistance decreasing from 49.944 (undoped) to 38.931&#xa0;Ω (0.75% Gr). The highest obtained properties for CZS film doped with 0.75% Gr showed significant potential for optoelectronic applications, particularly solar cells.</p>

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Fabrication of high-quality graphene-doped copper zinc sulfide (CZS:Gr) absorbers thin films

  • 期刊论文

  • 发表日期：

    2025年7月3日

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  • Kenza Kamli,
  • Zakaria Hadef,
  • Ouarda Kamli,
  • Najoua Turki Kamoun,
  • Meriem Messaoudi

摘要

This paper uses the spray pyrolysis method to report the fabrication of graphene-doped copper zinc sulfide (CZS:Gr) thin films, investigating their structural, optical, and electrical properties. The phase composition, microstructure, surface homogeneity, and elemental composition were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive X-ray spectroscopy (EDX), respectively. XRD analysis confirms graphene-induced lattice strain and substitutional doping, reducing crystallite size from 45 nm (0.125% Gr) to ~ 35 nm (1% Gr), while SEM reveals a transformation from heterogeneous “flower petal” grains to uniform spherical nanoparticles. The influence of synthesis conditions on the thin layers’ transmittance, reflectance, and PL properties was also studied. Optical analysis shows near-zero transmittance (~ 2%) and minimal reflectance, indicating superior light absorption. Furthermore, the electrical performance of CZS: Gr films was assessed by electrochemical impedance spectroscopy (EIS) and Hall effect measurement. Optimal doping at 0.75% Gr yields exceptional electrical performance: Hall effect measurements demonstrate a carrier mobility of 1.4 × 104 cm2 V⁻1 s⁻1, bulk carrier concentration of 7.8 × 1021 cm⁻3, and reduced resistivity (5.69 × 10⁻3 Ω cm). EIS further corroborates enhanced charge transport, with charge transfer resistance decreasing from 49.944 (undoped) to 38.931 Ω (0.75% Gr). The highest obtained properties for CZS film doped with 0.75% Gr showed significant potential for optoelectronic applications, particularly solar cells.