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<p>This review examines the optimization of zirconium oxide (ZrO<sub>2</sub>) as a dielectric material in metal–oxide–semiconductor capacitors (MOSCAPs), which play a pivotal role in modern electronic devices. By storing charge in a thin insulating layer between conductive electrodes, MOSCAPs are integral to the functionality of transistors, sensors, and memory devices. However, ZrO<sub>2</sub>-based dielectrics face challenges such as substantial leakage currents and interfacial layer (IL) effects, which have prompted detailed analysis of the strategies employed to address these limitations, including substrate selection, material hybridization, and advanced fabrication techniques. With the global semiconductor market projected to witness significant growth, this study highlights the importance of ZrO<sub>2</sub> in enhancing MOSCAP electrical properties and supporting industry innovation. Future directions are discussed, emphasizing interdisciplinary approaches to atomic-level interface engineering, substrate diversification, doping strategies, integration with 2D materials and low temperature deposition techniques. By offering comprehensive insights, this review underscores the transformative potential of ZrO<sub>2</sub> in shaping the future of electronic materials and semiconductor technologies.</p>

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Advances in ZrO2 gate dielectrics: materials, optimization strategies, and electronic applications

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年7月11日

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  • Nurliyana Abu Hasan Sazalli,
  • Chia Ching Kee,
  • Siti Hasanah Osman,
  • Boon Tong Goh,
  • Roslina Ahmad,
  • Prastika Krisma Jiwanti,
  • Yew Hoong Wong

摘要

This review examines the optimization of zirconium oxide (ZrO2) as a dielectric material in metal–oxide–semiconductor capacitors (MOSCAPs), which play a pivotal role in modern electronic devices. By storing charge in a thin insulating layer between conductive electrodes, MOSCAPs are integral to the functionality of transistors, sensors, and memory devices. However, ZrO2-based dielectrics face challenges such as substantial leakage currents and interfacial layer (IL) effects, which have prompted detailed analysis of the strategies employed to address these limitations, including substrate selection, material hybridization, and advanced fabrication techniques. With the global semiconductor market projected to witness significant growth, this study highlights the importance of ZrO2 in enhancing MOSCAP electrical properties and supporting industry innovation. Future directions are discussed, emphasizing interdisciplinary approaches to atomic-level interface engineering, substrate diversification, doping strategies, integration with 2D materials and low temperature deposition techniques. By offering comprehensive insights, this review underscores the transformative potential of ZrO2 in shaping the future of electronic materials and semiconductor technologies.