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<p>This study examined the fundamental electronic behaviors and potential applications of undoped and manganese (Mn)-doped magnesium oxide (MgO) films. A comparative analysis is conducted using various techniques, including ultraviolet–visible (UV–Vis) spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS). The UV–Vis spectroscopy measurements enabled the calculation of the bandgaps for all films examined. As the Mn dopant ratio increased, the MgO bandgap decreased from 4.0 to 3.5&#xa0;eV. The XRD analysis demonstrated that Mn doping induced changes in the crystalline phase, enhanced grain size, and reduced dislocation density across different doping ratios. Notably, the undoped MgO film exhibited a weak nanostructural morphology during the initial stage of nanostructure formation. It was observed that the PL quenching was observed in the spectra of Mn-doped MgO films, accompanied by increased deep-level emission. In addition, XPS measurements confirmed the presence of Mn in MgO and the binding energy values of Mg, Mn, and O. These findings illustrate that SILAR facilitates Mn doping in MgO thin films and that their properties can be modified by Mn doping for device applications. The secondary objective of this study was to investigate the impact of manganese doping at MgO thin film on the performance and stability of diodes. We explored the effect of Mn-doped MgO thin film interfaces on diode characteristics through current–voltage (I–V) analysis. Basic electrical parameters, including the ideality factor (n) and barrier height (Φb), were determined from the I–V characteristics. The findings indicated that both Mn-doped and undoped MgO thin films at the interface reduced the ideality factor and increased the barrier height. In addition, the effects of thermal annealing were studied on a diode made with 4% Mn-doped MgO. The I–V characteristics of the Norde method showed a barrier height of 0.58&#xa0;eV and an average series resistance of 48 Ω at room temperature. The series resistance values decreased slightly as the annealing temperature increased.</p>

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Study of the optical and structural properties of Mn-doped MgO thin films grown by the SILAR technique, analyzing the effects of annealing and doping on the charge transport magnesium oxide diodes

  • 期刊论文

  • 发表日期：

    2025年7月6日

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  • Ahmet Taşer

摘要

This study examined the fundamental electronic behaviors and potential applications of undoped and manganese (Mn)-doped magnesium oxide (MgO) films. A comparative analysis is conducted using various techniques, including ultraviolet–visible (UV–Vis) spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS). The UV–Vis spectroscopy measurements enabled the calculation of the bandgaps for all films examined. As the Mn dopant ratio increased, the MgO bandgap decreased from 4.0 to 3.5 eV. The XRD analysis demonstrated that Mn doping induced changes in the crystalline phase, enhanced grain size, and reduced dislocation density across different doping ratios. Notably, the undoped MgO film exhibited a weak nanostructural morphology during the initial stage of nanostructure formation. It was observed that the PL quenching was observed in the spectra of Mn-doped MgO films, accompanied by increased deep-level emission. In addition, XPS measurements confirmed the presence of Mn in MgO and the binding energy values of Mg, Mn, and O. These findings illustrate that SILAR facilitates Mn doping in MgO thin films and that their properties can be modified by Mn doping for device applications. The secondary objective of this study was to investigate the impact of manganese doping at MgO thin film on the performance and stability of diodes. We explored the effect of Mn-doped MgO thin film interfaces on diode characteristics through current–voltage (I–V) analysis. Basic electrical parameters, including the ideality factor (n) and barrier height (Φb), were determined from the I–V characteristics. The findings indicated that both Mn-doped and undoped MgO thin films at the interface reduced the ideality factor and increased the barrier height. In addition, the effects of thermal annealing were studied on a diode made with 4% Mn-doped MgO. The I–V characteristics of the Norde method showed a barrier height of 0.58 eV and an average series resistance of 48 Ω at room temperature. The series resistance values decreased slightly as the annealing temperature increased.