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<p>Atomically-thin transition metal dichalcogenides (TMDs) are promising for next-generation flexible electronic devices. Understanding their mechanical behaviour under applied strain is key for practical applications. In this work, we investigated the strain-induced structural and electronic changes in continuous monolayer MoS₂ grown by gas-phase chemical vapor deposition. Raman and photoluminescence spectroscopy are employed to in-situ study the MoS<sub>2</sub> layers transferred on polycarbonate substrates with PMMA encapsulation. A correlative plot of Raman modes allowed us to distinguish whether changes in both encapsulated and non-encapsulated films are due to strain or n-type doping. The findings highlight the strain sensitivity of monolayer MoS<sub>2</sub> and its potential for flexible electronics, offering critical knowledge for developing robust, strain-tolerant devices using gas-phase CVD-grown 2D TMDs.</p>

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Strain-induced structural and electronic modulation in gas-phase CVD-grown monolayer MoS2 films

  • 期刊论文

  • 发表日期：

    2025年6月24日

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  • Kalaiarasan Meganathan,
  • Vijaykumar Murugan,
  • Aljoscha Söll,
  • Muthumalai Karuppasamy,
  • Zdeněk Sofer,
  • Senthil Kumar Eswaran

摘要

Atomically-thin transition metal dichalcogenides (TMDs) are promising for next-generation flexible electronic devices. Understanding their mechanical behaviour under applied strain is key for practical applications. In this work, we investigated the strain-induced structural and electronic changes in continuous monolayer MoS₂ grown by gas-phase chemical vapor deposition. Raman and photoluminescence spectroscopy are employed to in-situ study the MoS2 layers transferred on polycarbonate substrates with PMMA encapsulation. A correlative plot of Raman modes allowed us to distinguish whether changes in both encapsulated and non-encapsulated films are due to strain or n-type doping. The findings highlight the strain sensitivity of monolayer MoS2 and its potential for flexible electronics, offering critical knowledge for developing robust, strain-tolerant devices using gas-phase CVD-grown 2D TMDs.