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<p>Zn<sub>1-x</sub>Mg<sub>x</sub>O thin films with a Mg content ranging from 35 to 53 at% were prepared by dual-target reactive magnetron co-sputtering at room temperature. X-ray diffractions show highly (0002)-preferred orientation growth of the wurtzite-structured films and the appearance of the rock-salt phase in films with the Mg concentration higher than 43 at%. The polarization and transient current hysteresis curve measurements confirm that the ferroelectricity can be achieved not only in single wurtzite-structured films, but also surprisingly in films co-existing with wurtzite and rock-salt phases. The results contribute significant progress in understanding and further optimizing the ferroelectric property of wurtzite-structured materials, while achieving a broader ferroelectric composition range is also more advantageous for device applications.</p>

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Demonstration of ferroelectricity in Zn1-xMgxO thin films over a wide Mg concentration range

  • 期刊论文

  • 发表日期：

    2025年6月26日

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  • Wenjin Zhao,
  • Dayu Zhou,
  • Jinyang Sui,
  • Yi Tong,
  • Xinpeng Wang,
  • Longxiao Zhu

摘要

Zn1-xMgxO thin films with a Mg content ranging from 35 to 53 at% were prepared by dual-target reactive magnetron co-sputtering at room temperature. X-ray diffractions show highly (0002)-preferred orientation growth of the wurtzite-structured films and the appearance of the rock-salt phase in films with the Mg concentration higher than 43 at%. The polarization and transient current hysteresis curve measurements confirm that the ferroelectricity can be achieved not only in single wurtzite-structured films, but also surprisingly in films co-existing with wurtzite and rock-salt phases. The results contribute significant progress in understanding and further optimizing the ferroelectric property of wurtzite-structured materials, while achieving a broader ferroelectric composition range is also more advantageous for device applications.