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<p>Despite using a 140&#xa0;mJ laser energy, the research team synthesized WS<sub>2</sub> and MoS<sub>2</sub> and hybrid (WS<sub>2</sub>/MoS<sub>2</sub>) thin films through pulsed laser deposition (PLD) on RTV-800 silicone rubber substrates. The structural phases, along with crystallinity and surface morphology of deposited films, were thoroughly studied through X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDS), and atomic force microscopy (AFM). The main objective of the research was to study the changes in optical characteristics that occurred when MoS<sub>2</sub> was added to WS<sub>2</sub>-based thin films. The researchers examined the internal optical interference optical band gap and dielectric constant and more parameters to determine their findings. A decrease in optical band gap occurred progressively as MoS<sub>2</sub> weight percentage rose from 0 to 60%, leading to a shift from 2.20 to 1.65&#xa0;eV. The optical band gap values measured at 0%, 20%, 40%, 50%, and 60% MoS<sub>2</sub> concentrations were 2.20&#xa0;eV, 2.15&#xa0;eV, 2.05&#xa0;eV, 1.94&#xa0;eV, and 1.65&#xa0;eV successively. XRD results showed that peak positions altered based on laser energy and substrate temperature levels together with ambient condition changes during deposition followed by annealing processes. The XRD pattern of WS<sub>2</sub> thin films displayed peaks at 14.51°, 27.81° and 40.99° and MoS<sub>2</sub> thin films displayed peaks at 14.53°, 29.38°, 40.52°, and 44.56°. The absorption coefficient values of MoS<sub>2</sub> films demonstrated significant reduction as the thickness of the films increased. The absorption coefficient of MoS<sub>2</sub> thin films started at 3.08 × 10<sup>5</sup>&#xa0;cm<sup>−1</sup> at 108&#xa0;nm thickness and decreased to 1 × 10<sup>5</sup>&#xa0;cm<sup>−1</sup> at 375&#xa0;nm, indicating an opposite relationship between film thickness and absorption efficiency in MoS<sub>2</sub> films.</p>

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Engineering WS2/MoS2 thin films via pulsed laser deposition: structural and optical characterization

  • 期刊论文

  • 发表日期：

    2025年6月28日

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  • A. H. Abbas,
  • S. Z. Mortazavi,
  • A. Reyhani,
  • M. H. Almaamori,
  • M. R. Khanlary

摘要

Despite using a 140 mJ laser energy, the research team synthesized WS2 and MoS2 and hybrid (WS2/MoS2) thin films through pulsed laser deposition (PLD) on RTV-800 silicone rubber substrates. The structural phases, along with crystallinity and surface morphology of deposited films, were thoroughly studied through X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDS), and atomic force microscopy (AFM). The main objective of the research was to study the changes in optical characteristics that occurred when MoS2 was added to WS2-based thin films. The researchers examined the internal optical interference optical band gap and dielectric constant and more parameters to determine their findings. A decrease in optical band gap occurred progressively as MoS2 weight percentage rose from 0 to 60%, leading to a shift from 2.20 to 1.65 eV. The optical band gap values measured at 0%, 20%, 40%, 50%, and 60% MoS2 concentrations were 2.20 eV, 2.15 eV, 2.05 eV, 1.94 eV, and 1.65 eV successively. XRD results showed that peak positions altered based on laser energy and substrate temperature levels together with ambient condition changes during deposition followed by annealing processes. The XRD pattern of WS2 thin films displayed peaks at 14.51°, 27.81° and 40.99° and MoS2 thin films displayed peaks at 14.53°, 29.38°, 40.52°, and 44.56°. The absorption coefficient values of MoS2 films demonstrated significant reduction as the thickness of the films increased. The absorption coefficient of MoS2 thin films started at 3.08 × 105 cm−1 at 108 nm thickness and decreased to 1 × 105 cm−1 at 375 nm, indicating an opposite relationship between film thickness and absorption efficiency in MoS2 films.