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<p>This study investigates the potential and efficiency of Ge as an electrical nonlinearity enhancer for ZnO-based varistor ceramics under low-temperature sintering conditions. For this purpose, 0–0.15 mol% GeO<sub>2</sub>-doped ZnO–Bi<sub>2</sub>O<sub>3</sub>–MnCO<sub>3</sub> ceramics were prepared by a conventional solid-state process, followed by sintering at 875&#xa0;°C for 4 h. Results show that GeO<sub>2</sub> addition forms Bi<sub>12</sub>GeO<sub>20</sub> at grain boundaries, which inhibits ZnO grain growth. Within the 0–0.15 mol% range, GeO<sub>2</sub> significantly enhances the nonlinear coefficient (<i>α</i>) from 25.04 to 61.26 and increases the breakdown voltage (<i>E</i><sub>b</sub>) from 356.41 to 692.78&#xa0;V/mm. Optimal electrical performance, with nonlinear coefficient <i>α</i> = 61.26, breakdown voltage (<i> E</i><sub>b</sub>) = 548.25&#xa0;V/mm, and low leakage current density (<i>l</i><sub>L</sub>) = 4.48&#xa0;μA/cm<sup>2</sup>), was obtained by adding 0.03&#xa0;mol% GeO<sub>2</sub>. These findings confirm that Ge is by far the most effective tetravalence electrical nonlinearity enhancer for ZnO-based varistor ceramics at low sintering temperature. GeO<sub>2</sub>-doped ZnO–Bi<sub>2</sub>O<sub>3</sub>–MnCO<sub>3</sub> ceramics, with simplified composition and low sintering temperatures, are promising for cost-effective low-voltage varistor applications.</p>

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Ge: the most efficient tetravalence electrical nonlinearity enhancer for ZnO base varistor ceramics

  • 期刊论文

  • 发表日期：

    2025年7月14日

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  • Chenghao Cui,
  • Ming Zhao,
  • Miaomiao Chen,
  • Zhuocheng Liu,
  • Hui Tao,
  • Hua Chen,
  • Yongsheng Du,
  • Leibo Deng,
  • Zhongwang Wu

摘要

This study investigates the potential and efficiency of Ge as an electrical nonlinearity enhancer for ZnO-based varistor ceramics under low-temperature sintering conditions. For this purpose, 0–0.15 mol% GeO2-doped ZnO–Bi2O3–MnCO3 ceramics were prepared by a conventional solid-state process, followed by sintering at 875 °C for 4 h. Results show that GeO2 addition forms Bi12GeO20 at grain boundaries, which inhibits ZnO grain growth. Within the 0–0.15 mol% range, GeO2 significantly enhances the nonlinear coefficient (α) from 25.04 to 61.26 and increases the breakdown voltage (Eb) from 356.41 to 692.78 V/mm. Optimal electrical performance, with nonlinear coefficient α = 61.26, breakdown voltage ( Eb) = 548.25 V/mm, and low leakage current density (lL) = 4.48 μA/cm2), was obtained by adding 0.03 mol% GeO2. These findings confirm that Ge is by far the most effective tetravalence electrical nonlinearity enhancer for ZnO-based varistor ceramics at low sintering temperature. GeO2-doped ZnO–Bi2O3–MnCO3 ceramics, with simplified composition and low sintering temperatures, are promising for cost-effective low-voltage varistor applications.