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<p>The double-sided Topcon structure has attracted widespread attention from researchers due to its unique advantages such as high energy conversion efficiency and low attenuation. However, compared with the low recombination current density (J0) of n-type polycrystalline silicon, the poor interface passivation performance and high carrier recombination rate of p-type polysilicon limit the promotion of p-type Topcon in practical applications. This paper significantly improved the interface passivation performance of polysilicon film by optimizing the key process parameters and post-processing technology of PECVD. Experimental results demonstrate that n-type amorphous silicon achieved optimal performance at 15 W, 90&#xa0;Pa, and 10&#xa0;min deposition conditions, yielding a J0 of 14 fA/cm<sup>2</sup>, while p-type amorphous silicon showed minimal variation with a best J0 of 1.31 pA/cm<sup>2</sup>. Following the introduction of tunneling oxide and silicon nitride layers, the interfacial properties of amorphous silicon films were further enhanced, achieving J0 values of 4.23 fA/cm<sup>2</sup> for n-type polysilicon and 30 fA/cm<sup>2</sup> for p-type polysilicon. Using these optimized parameters, we construct n-type and p-type Topcon solar cells that demonstrated high power conversion efficiencies of 25.43 and 25.42%, respectively. This study verifies the potential for improving the efficiency of p-type Topcon cells and provides an important reference for the future industrial application of double-sided Topcon technology from the perspective of material and process optimization.</p>

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Development of p-type topcon based on low-temperature PECVD process

  • 期刊论文

  • 发表日期：

    2025年7月11日

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  • Yongyao Li,
  • Rui Jia,
  • Huifeng Chang,
  • Chunlin Guo,
  • Jialing Tao,
  • Jiawang Chen,
  • Xing Li,
  • Deshuang Chen,
  • Yong Ren,
  • Feifei Song,
  • Xiaoping Ouyang

摘要

The double-sided Topcon structure has attracted widespread attention from researchers due to its unique advantages such as high energy conversion efficiency and low attenuation. However, compared with the low recombination current density (J0) of n-type polycrystalline silicon, the poor interface passivation performance and high carrier recombination rate of p-type polysilicon limit the promotion of p-type Topcon in practical applications. This paper significantly improved the interface passivation performance of polysilicon film by optimizing the key process parameters and post-processing technology of PECVD. Experimental results demonstrate that n-type amorphous silicon achieved optimal performance at 15 W, 90 Pa, and 10 min deposition conditions, yielding a J0 of 14 fA/cm2, while p-type amorphous silicon showed minimal variation with a best J0 of 1.31 pA/cm2. Following the introduction of tunneling oxide and silicon nitride layers, the interfacial properties of amorphous silicon films were further enhanced, achieving J0 values of 4.23 fA/cm2 for n-type polysilicon and 30 fA/cm2 for p-type polysilicon. Using these optimized parameters, we construct n-type and p-type Topcon solar cells that demonstrated high power conversion efficiencies of 25.43 and 25.42%, respectively. This study verifies the potential for improving the efficiency of p-type Topcon cells and provides an important reference for the future industrial application of double-sided Topcon technology from the perspective of material and process optimization.