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<p>Spinel ferrites Cu<sub>1−<i>x</i></sub>Co<sub><i>x</i></sub>Fe<sub>2−<i>y</i></sub>Cr<sub><i>y</i></sub>O<sub>4</sub> (<i>x/y</i> = 0, 0.1, 0.2, 0.3, 0.4) were prepared by sol–gel route and several characterization tools such as x-ray diffraction (XRD), impedance analyzer, Fourier transform-infrared radiation (FT-IR), and modulus spectroscopy were used. The XRD pattern confirms a single-phase structure of the based specimen. The effect of chromium and cobalt doping and redistribution of cations in the copper ferrite (CuFe<sub>2</sub>O<sub>4</sub>) changed the physical properties effectively. The lattice constant was observed to decrease with concentration and the crystalline size was found in the range 21.38–38.97&#xa0;nm. The lattice strain was measured to be negative which shows minimum crystal dislocation. The FT–IR analysis confirmed the metal–oxygen bond stretching vibration with the wave number in the range 600–4000&#xa0;cm<sup>−1</sup>. The copper–oxygen stretching band at wave numbers 683&#xa0;cm<sup>−1</sup> and 1128&#xa0;cm<sup>−1</sup> shows the presence of cobalt. Dielectric parameters such as AC conductivity, tangent and dielectric losses decrease with concentration and applied frequency. Likewise, the maximum dielectric loss of 0.34 is quantified for the sample Cu<sub>0.8</sub>Co<sub>0.2</sub>Fe<sub>1.8</sub>Cr<sub>0.2</sub>O<sub>4</sub> at 2&#xa0;MHz. The asymmetry peak in the imaginary part of the modulus spectra stipulates that the relaxation process is non-Debye type. The alteration in conductivity is described in terms of the diversification in microstructure and variation in the mobility of carriers related to the cation redistribution induced by annealing or grain size. The quality factor of the based sample was 9.09 is less than Cr–Co doped samples in the frequency range of 2.0–3.0&#xa0;GHz. The effective dielectric constant and low dielectric loss of the synthesized nanoparticles make these materials potential candidates for high-frequency applications in nano-electronic devices.</p>

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Structural, dielectric, and electrical properties of the spinel ferrites nanoparticles Cu1−xCoxFe2−yCryO4

  • 期刊论文

  • 发表日期：

    2025年6月13日

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  • Ihsan Ullah,
  • Tayyeb Ullah,
  • Abdul Majeed,
  • Qaisar Khan,
  • Haq Nawab,
  • Rashid Ahmad,
  • Iftikhar Ahmad,
  • Imad Khan

摘要

Spinel ferrites Cu1−xCoxFe2−yCryO4 (x/y = 0, 0.1, 0.2, 0.3, 0.4) were prepared by sol–gel route and several characterization tools such as x-ray diffraction (XRD), impedance analyzer, Fourier transform-infrared radiation (FT-IR), and modulus spectroscopy were used. The XRD pattern confirms a single-phase structure of the based specimen. The effect of chromium and cobalt doping and redistribution of cations in the copper ferrite (CuFe2O4) changed the physical properties effectively. The lattice constant was observed to decrease with concentration and the crystalline size was found in the range 21.38–38.97 nm. The lattice strain was measured to be negative which shows minimum crystal dislocation. The FT–IR analysis confirmed the metal–oxygen bond stretching vibration with the wave number in the range 600–4000 cm−1. The copper–oxygen stretching band at wave numbers 683 cm−1 and 1128 cm−1 shows the presence of cobalt. Dielectric parameters such as AC conductivity, tangent and dielectric losses decrease with concentration and applied frequency. Likewise, the maximum dielectric loss of 0.34 is quantified for the sample Cu0.8Co0.2Fe1.8Cr0.2O4 at 2 MHz. The asymmetry peak in the imaginary part of the modulus spectra stipulates that the relaxation process is non-Debye type. The alteration in conductivity is described in terms of the diversification in microstructure and variation in the mobility of carriers related to the cation redistribution induced by annealing or grain size. The quality factor of the based sample was 9.09 is less than Cr–Co doped samples in the frequency range of 2.0–3.0 GHz. The effective dielectric constant and low dielectric loss of the synthesized nanoparticles make these materials potential candidates for high-frequency applications in nano-electronic devices.