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<p>The present work uses the thermal CVD method to grow vertically oriented carbon nanotubes over a set of Si substrates. A dielectric (Silicon nitride) has been deposited on the pristine CNTs using the PECVD technique, succeeded by the deposition of metals (Cu and Zn) using the thermal evaporation method. Several characterization techniques have been imposed to study and analyze the structural properties, morphology, elemental composition, and electronic structure. The field emission measurements were performed on these CNT-dielectric-metal hybrids. The Zn/Si<sub>3</sub>N<sub>4</sub>/CNTs reported a highest current density of 17&#xa0;mA/cm<sup>2</sup> compared to the Si<sub>3</sub>N<sub>4</sub>/CNTs, and Cu/Si<sub>3</sub>N<sub>4</sub>/CNTs. The study reveals that the enhanced metallic nature of Cu and enhanced density of states close to the Fermi level in Cu/Si<sub>3</sub>N<sub>4</sub>/CNTs, sp<sup>3</sup> hybridized C atoms in Zn/Si<sub>3</sub>N<sub>4</sub>/CNTs, and negative electron affinity of Zn are primarily responsible for the better performance of the metal-decorated Si<sub>3</sub>N<sub>4</sub>/CNTs hybrids.</p>

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Nanometallic decoration on Si3N4/CNTs for enhanced field emission properties

  • 期刊论文

  • 发表日期：

    2025年6月16日

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  • Shubham Saini,
  • Santanu Ghosh,
  • Pankaj Srivastava

摘要

The present work uses the thermal CVD method to grow vertically oriented carbon nanotubes over a set of Si substrates. A dielectric (Silicon nitride) has been deposited on the pristine CNTs using the PECVD technique, succeeded by the deposition of metals (Cu and Zn) using the thermal evaporation method. Several characterization techniques have been imposed to study and analyze the structural properties, morphology, elemental composition, and electronic structure. The field emission measurements were performed on these CNT-dielectric-metal hybrids. The Zn/Si3N4/CNTs reported a highest current density of 17 mA/cm2 compared to the Si3N4/CNTs, and Cu/Si3N4/CNTs. The study reveals that the enhanced metallic nature of Cu and enhanced density of states close to the Fermi level in Cu/Si3N4/CNTs, sp3 hybridized C atoms in Zn/Si3N4/CNTs, and negative electron affinity of Zn are primarily responsible for the better performance of the metal-decorated Si3N4/CNTs hybrids.