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<p>Te-doped ZnO thin films (5 wt.%) were fabricated by pulsed laser deposition (PLD) using TeO₂ (T-series) and ZnTe (Z-series) dopants, followed by annealing under oxygen pressures (AOP) of 100 and 500&#xa0;Pa. XRD confirmed that all films retained a hexagonal wurtzite structure with preferential growth along the (002) plane. After AOP, Te phases persisted alongside trace TeO₃ formation, while oxygen pressure significantly modulated film stress, lattice strain, and grain size. FESEM revealed morphological evolution: the T-series transitioned from “mixed fine-coarse grain aggregates” to irregular block structures after AOP, whereas the Z-series transformed from “particle cluster structures” to dense blocks. XPS analysis showed that increased oxygen pressure elevated zinc vacancy (V<sub>Zn</sub>) concentrations in the T-series and reduced interstitial zinc (Zn<sub>i</sub>) content in the Z-series, collectively enhancing p-type conductivity. Te doping primarily occurred via substitution of Zn<sup>2+</sup> by Te ions. Optical characterization demonstrated visible-light transmittance &gt; 85%, stress-modulated bandgap values of 3.27–3.30&#xa0;eV, and photoluminescence peaks at 375–600&#xa0;nm (UV-yellow) and 820–840&#xa0;nm (Near-infrared), whose intensities increased with oxygen pressure. This study elucidates the synergistic effects of Te doping and oxygen pressure on tailoring the structure-property relationships of ZnO thin films.</p>

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Structure-property engineering of Te-doped ZnO thin films via pulsed laser deposition

  • 期刊论文

  • 发表日期：

    2025年6月9日

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  • Weijie Deng,
  • Hongyu Liu,
  • Qian Liu,
  • Rengang Zhang

摘要

Te-doped ZnO thin films (5 wt.%) were fabricated by pulsed laser deposition (PLD) using TeO₂ (T-series) and ZnTe (Z-series) dopants, followed by annealing under oxygen pressures (AOP) of 100 and 500 Pa. XRD confirmed that all films retained a hexagonal wurtzite structure with preferential growth along the (002) plane. After AOP, Te phases persisted alongside trace TeO₃ formation, while oxygen pressure significantly modulated film stress, lattice strain, and grain size. FESEM revealed morphological evolution: the T-series transitioned from “mixed fine-coarse grain aggregates” to irregular block structures after AOP, whereas the Z-series transformed from “particle cluster structures” to dense blocks. XPS analysis showed that increased oxygen pressure elevated zinc vacancy (VZn) concentrations in the T-series and reduced interstitial zinc (Zni) content in the Z-series, collectively enhancing p-type conductivity. Te doping primarily occurred via substitution of Zn2+ by Te ions. Optical characterization demonstrated visible-light transmittance > 85%, stress-modulated bandgap values of 3.27–3.30 eV, and photoluminescence peaks at 375–600 nm (UV-yellow) and 820–840 nm (Near-infrared), whose intensities increased with oxygen pressure. This study elucidates the synergistic effects of Te doping and oxygen pressure on tailoring the structure-property relationships of ZnO thin films.