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<p>Phase change memory (PCM) enters the domain of next-generation non-volatile memory technology. Herein, we report the structural, electrical, optical, vibrational, and switching properties of (Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>)<sub>(1-<i>x</i>)</sub>(GeS<sub>2</sub>)<sub>(<i>x</i>)</sub> (<i>x</i> = 0, 0.05, 0.1, 0.15, 0.2, 0.25) films. After annealing at higher temperatures, the amorphous film of the doped samples crystallized to face-centered cubic (FCC) and hexagonal (HEX) structures (amorphous → FCC → HEX) with no lattice distortion and phase separation, indicating the enhancement in the thermal stability of the amorphous phase after introducing GeS<sub>2</sub>.The crystallization temperature and the SET resistance (~ 0.08 kΩ/□ to ~ 1.1 kΩ/□) monotonically increased with GeS<sub>2</sub> concentration. The incorporation of GeS<sub>2</sub> increases the optical bandgap of both the amorphous (~ 0.58 to ~ 1&#xa0;eV) and crystalline (~ 0.38 to ~ 0.5&#xa0;eV) films. The threshold current (I<sub>th</sub>) decreases from 1.45 to 0.353&#xa0;mA. The activation energy and the corresponding data retention temperature for 10&#xa0;years increased from 2.79&#xa0;eV to 4.86&#xa0;eV and 78&#xa0;°C to 127&#xa0;°C, respectively. The formation of a metastable (FCC) phase at higher temperatures with no phase separation, increases SET resistance (reduced I<sub>th</sub>) in (Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>)<sub>(1-<i>x</i>)</sub>(GeS<sub>2</sub>)<sub>(<i>x</i>)</sub> films, which will improve the thermal stability and reduce the RESET current for PCM.</p>

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Investigations of the phase change properties of (Ge2Sb2Te5)(1-x)(GeS2)(x) 0 ≤ x ≤ 0.25 films

  • 期刊论文

  • 发表日期：

    2025年6月24日

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  • Shahin Parveen,
  • Nidhi Bhatt,
  • Abdul Whab,
  • R. Venkatesh,
  • Pumlianmunga

摘要

Phase change memory (PCM) enters the domain of next-generation non-volatile memory technology. Herein, we report the structural, electrical, optical, vibrational, and switching properties of (Ge2Sb2Te5)(1-x)(GeS2)(x) (x = 0, 0.05, 0.1, 0.15, 0.2, 0.25) films. After annealing at higher temperatures, the amorphous film of the doped samples crystallized to face-centered cubic (FCC) and hexagonal (HEX) structures (amorphous → FCC → HEX) with no lattice distortion and phase separation, indicating the enhancement in the thermal stability of the amorphous phase after introducing GeS2.The crystallization temperature and the SET resistance (~ 0.08 kΩ/□ to ~ 1.1 kΩ/□) monotonically increased with GeS2 concentration. The incorporation of GeS2 increases the optical bandgap of both the amorphous (~ 0.58 to ~ 1 eV) and crystalline (~ 0.38 to ~ 0.5 eV) films. The threshold current (Ith) decreases from 1.45 to 0.353 mA. The activation energy and the corresponding data retention temperature for 10 years increased from 2.79 eV to 4.86 eV and 78 °C to 127 °C, respectively. The formation of a metastable (FCC) phase at higher temperatures with no phase separation, increases SET resistance (reduced Ith) in (Ge2Sb2Te5)(1-x)(GeS2)(x) films, which will improve the thermal stability and reduce the RESET current for PCM.