Achieving wide dielectric temperature stability in low-temperature-sintered Pb(Fe2/3W1/3)O3–BiFeO3 ceramics by Ti doping
摘要
An increasing number of multilayer ceramic capacitor (MLCC) applications have expanded into harsh working environments, such as desert oil drilling, aircraft, space exploration equipment, and special military robots. However, the sintering temperature of those materials are high, restricting the usage of cheap base metal electrodes in fabrication of multilayer components. Therefore, seeking suitable dielectric ceramic materials with wide operating temperature range, low sintering temperature, and excellent dielectric properties has become the main challenge for the development of MLCCs. In this study, the 0.8Pb[(Fe2/3W1/3)1-xTix]O3–0.2BiFeO3 (x = 0, 0.005, 0.01, and 0.02) ceramics are synthesized using the solid-state reaction technique. Dense ceramic samples with pure perovskite structure are successfully obtained after sintering at a very low sintering temperature of 850 °C, which is cost effective from the point view of industry. The dielectric properties of different Ti4+ doped content were investigated in a wide temperature range from −150 °C to + 250 °C at frequency of 1 kHz to 1 MHz. As x increases from 0 to 0.02, the room temperature dielectric permittivity (ε') increases slightly while the loss tangent (tanδ) decreases at 1 kHz, and all samples maintain good capacitance temperature stability (−15% ≤ ΔC/C25℃ ≤ + 15%) down to very low temperature, indicating the beneficial effects on the dielectric performance by Ti4+ doping. The composition with x = 0.005 shows the widest temperature stability range of −130 °C to + 85 °C at 1 kHz and −110 °C to + 160 °C at 100 kHz, which well reaches the standard of the EIA X5R.