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<p>This study investigates the characteristics of NbN thin films doped with W and Cr and vacuum annealed. W-doped NbN and Cr-doped NbN films were deposited using reactive DC magnetron and RF magnetron co-sputtering. The effects of dopants and annealing temperatures on the crystal structure, electrical properties, and microstructure of NbN films were also examined. The XRD results indicated the presence of a face-centered cubic (FCC) crystal structure in the as-deposited pure NbN films. Interestingly, the crystallization phase remained unchanged within an annealing temperature range from room temperature to 500&#xa0;°C. However, all of W-doped and Cr-doped NbN films were shown the FCC crystalline structure. With increasing the annealing temperature to 500&#xa0;°C, the single phase was existed still in the films. From the results of TEM analysis, it can be found that after annealing, the crystallinity of the film is obviously better than that of the non-annealed film. Notably, at a nitrogen content of 9%, the film exhibited the lowest resistivity of 273 μΩ&#xa0;cm with a TCR of −&#xa0;240&#xa0;ppm/°C. The resistivity of NbN thin films decreases with increasing W or Cr content. The resistivity of pure NbN films is 273 μΩ&#xa0;cm, which is reduced to 222 μΩ&#xa0;cm with 8.0% W doping and to 239 μΩ⋅cm with 6.80% Cr doping. The optimal electrical properties were achieved in Cr-doped NbN films after annealing at 400&#xa0;°C, with a resistivity of 221 μΩ&#xa0;cm and a TCR of −&#xa0;72&#xa0;ppm/°C. Hall effect measurement results show that the carrier mobility of NbN film is increased by adding W and Cr elements, thereby obtaining better electrical properties.</p>

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The microstructure and electrical property of M-doped (M = W, Cr) NbN thin films

  • 期刊论文

  • 发表日期：

    2025年6月3日

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  • Ying-Chieh Lee,
  • Hau Yang,
  • Ting-Fu Hong,
  • Huei-Jyun Shih,
  • Wen-His Lee

摘要

This study investigates the characteristics of NbN thin films doped with W and Cr and vacuum annealed. W-doped NbN and Cr-doped NbN films were deposited using reactive DC magnetron and RF magnetron co-sputtering. The effects of dopants and annealing temperatures on the crystal structure, electrical properties, and microstructure of NbN films were also examined. The XRD results indicated the presence of a face-centered cubic (FCC) crystal structure in the as-deposited pure NbN films. Interestingly, the crystallization phase remained unchanged within an annealing temperature range from room temperature to 500 °C. However, all of W-doped and Cr-doped NbN films were shown the FCC crystalline structure. With increasing the annealing temperature to 500 °C, the single phase was existed still in the films. From the results of TEM analysis, it can be found that after annealing, the crystallinity of the film is obviously better than that of the non-annealed film. Notably, at a nitrogen content of 9%, the film exhibited the lowest resistivity of 273 μΩ cm with a TCR of − 240 ppm/°C. The resistivity of NbN thin films decreases with increasing W or Cr content. The resistivity of pure NbN films is 273 μΩ cm, which is reduced to 222 μΩ cm with 8.0% W doping and to 239 μΩ⋅cm with 6.80% Cr doping. The optimal electrical properties were achieved in Cr-doped NbN films after annealing at 400 °C, with a resistivity of 221 μΩ cm and a TCR of − 72 ppm/°C. Hall effect measurement results show that the carrier mobility of NbN film is increased by adding W and Cr elements, thereby obtaining better electrical properties.