This work presents the behavior of adjusting the dielectric and impedance characteristics by varying the voltage and illumination for a metal–organic semiconductor material-semiconductor (MOmS) configuration for optoelectronic applications. We analyzed the \({\varepsilon }{\prime}\) , \({\varepsilon }^{{\prime}{\prime}}\) , tan \(\delta\) , \({M}{\prime}\) , \({M}^{{\prime}{\prime}}\) , \({\sigma }_{ac}\) , \({Z}{\prime}\) , \({Z}^{{\prime}{\prime}}\) , \(\theta\) characteristics of the metal-organic semiconductor–semiconductor diodes at a illumination intensity of 0- 120 mW/cm2, bias voltage range of − 4 V; + 4 V and at 1 MHz. The Cole–Cole plot showed a single semicircle at dark and in the different illumination intensity. The new phenomena that have seemed are the presence of a peak in the \({\varepsilon }^{{\prime}{\prime}}\) , \({M}^{{\prime}{\prime}}\) , and \({Z}{\prime}\) characteristics. With increasing voltage ‘and illumination intensity, it was discovered that the dielectric constant \({\varepsilon }{\prime}\) and dielectric loss \({\varepsilon }^{{\prime}{\prime}}\) increased. The illumination increases from 0 to 120 mW/cm2, increasing the values of \({\varepsilon }{\prime}\) and \({\varepsilon }^{{\prime}{\prime}}\) from 3.52 to 3.56 and 0.204 to 0.606, respectively. The BOD-Z-EN organic semiconductor layer exhibited a illumination-dependent electrical relaxation phenomenon, as seen by the \({M}^{{\prime}{\prime}}-{M}{\prime}\) graphs. Consequently, this work examined the dielectric characteristics of the BOD-Z-EN-based photocapacitor structure and came to the conclusion that it could be a good dielectric material. Additionally, the material's high modulus, impedance, and phase angle properties suggest that it may find application in photonic devices. This study highlights that the fabricated Au/BOD-Z-En/n-Si device is a photosensitive capacitor.
