<p>In this study, NiO-modified CaCu<sub>3</sub>Ti<sub>4</sub>O<sub>12</sub> (CCTO–xNiO) ceramics were successfully synthesized via a semi-wet route, achieving simultaneous enhancement of dielectric and nonlinear properties while reducing dielectric losses. Unlike conventional solid-state methods, this approach offers improved control over grain morphology, leading to a significant reduction in energy dissipation. The impact of NiO doping (<i>x</i> = 0.01, 0.06, 0.15, 0.2) on the microstructure and dielectric characteristics of CCTO ceramics was systematically investigated. SEM analysis revealed a grain size increase from 2.53&#xa0;µm (<i>x</i> = 0) to 11.46&#xa0;µm (<i>x</i> = 0.06), followed by a decrease to 1.83&#xa0;µm (<i>x</i> = 0.15) and 1.03&#xa0;µm (<i>x</i> = 0.2), demonstrating the effect of NiO on grain growth inhibition. A minor quantity of NiO (<i>x</i> = 0.06) promoted grain growth, leading to enhanced dielectric and electrical properties. The 6% NiO sample exhibited the highest permittivity of 1.2 × 10<sup>5</sup> at 1&#xa0;kHz, while the 15% NiO sample displayed the lowest dielectric loss (~ 0.02 at 1&#xa0;kHz)<b>,</b> a higher breakdown voltage (~ 4640&#xa0;V·cm⁻<sup>1</sup>), and an enhanced nonlinear coefficient (~ 5.55), confirming its improved insulating performance. These enhancements are attributed to a synergistic effect between NiO doping and grain boundary modifications, as explained by the Schottky barrier and internal barrier layer capacitor (IBLC) models. This study provides new insights into microstructure-property relationships in CCTO ceramics, paving the way for the development of advanced dielectric materials with optimized performance for energy storage and capacitor applications.</p>

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Simultaneous improvement of permittivity and nonlinear properties and loss tangent reduction through semi-wet route in NiO-modified CaCu3Ti4O12 ceramics: grain boundaries effect

  • Salam Rhouma,
  • Adel Megriche,
  • Emna Souidi,
  • Senda Said,
  • Cécile Autret-Lambert

摘要

In this study, NiO-modified CaCu3Ti4O12 (CCTO–xNiO) ceramics were successfully synthesized via a semi-wet route, achieving simultaneous enhancement of dielectric and nonlinear properties while reducing dielectric losses. Unlike conventional solid-state methods, this approach offers improved control over grain morphology, leading to a significant reduction in energy dissipation. The impact of NiO doping (x = 0.01, 0.06, 0.15, 0.2) on the microstructure and dielectric characteristics of CCTO ceramics was systematically investigated. SEM analysis revealed a grain size increase from 2.53 µm (x = 0) to 11.46 µm (x = 0.06), followed by a decrease to 1.83 µm (x = 0.15) and 1.03 µm (x = 0.2), demonstrating the effect of NiO on grain growth inhibition. A minor quantity of NiO (x = 0.06) promoted grain growth, leading to enhanced dielectric and electrical properties. The 6% NiO sample exhibited the highest permittivity of 1.2 × 105 at 1 kHz, while the 15% NiO sample displayed the lowest dielectric loss (~ 0.02 at 1 kHz), a higher breakdown voltage (~ 4640 V·cm⁻1), and an enhanced nonlinear coefficient (~ 5.55), confirming its improved insulating performance. These enhancements are attributed to a synergistic effect between NiO doping and grain boundary modifications, as explained by the Schottky barrier and internal barrier layer capacitor (IBLC) models. This study provides new insights into microstructure-property relationships in CCTO ceramics, paving the way for the development of advanced dielectric materials with optimized performance for energy storage and capacitor applications.