This study concentrated on the synthesis and detailed characterization of Zn \(_{1-x}\) Cd \(_{x}\) S thin films prepared using the thermal evaporation technique. The thin films were analyzed for their structural, morphological, elemental, surface roughness, topographical, optical, and electrical properties using XRD, FE-SEM, EDAX, AFM, UV–Vis spectroscopy, photoluminescence (PL), Hall effect measurements, and I–V measurements, respectively. XRD patterns confirmed that the structure of Zn \(_{1-x}\) Cd \(_{x}\) S is cubic, while FE-SEM images revealed the complete growth phenomenon of the thin films. EDAX spectra verified the presence of Zn, S, and Cd in the samples. AFM measurements revealed that the RMS roughness of the Zn \(_{1-x}\) Cd \(_{x}\) S films decreased from 13.59 to 12.83 nm with dopant concentration. Absorption and energy band gaps were analyzed using UV–Vis spectroscopy. The investigation of photoluminescence (PL) spectra reveals peak intensity decreased with increasing dopant concentration, indicating a reduction in defect centers. Hall effect studies and I–V measurements (in dark and light) confirmed that the resistivity decreased and the electrical current of Zn \(_{1-x}\) Cd \(_{x}\) S thin films increased with higher dopant concentrations.
