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<p>The annealing process impacts the electrical properties of Al<sub>2</sub>O<sub>3</sub> MOSCAPs by altering defect densities and interface trap states. Annealing at 500&#xa0;°C enhances structural integrity and optimizes capacitance, while higher temperatures lead to crystallization, increased interface defects, and SiO<sub>2</sub> interlayer formation, reducing capacitance. <i>C</i>–<i>V</i> and <i>G</i>–<i>V</i> measurements analyze interface states, series resistance, and oxide quality. To eliminate series resistance effects and determine electrical properties accurately, the Nicollian and Goetzberger method should be used. As frequency increases, the rearrangement time of trapped charges decreases, shifting the diffusion potential to more negative values. At high frequencies, interface state influence weakens, enabling more accurate doping concentration (Nd) determination, while barrier potential (<i>Φ</i><sub>B</sub>) decreases and carrier mobility increases. Radiation exposure reduces capacitance due to defect formation, altered charge carrier dynamics, and dielectric degradation. Radiation-induced positive charge accumulation and increased interface state density (<i>N</i><sub>it</sub>) cause a negative <i>C</i>–<i>V</i> curve shift and lower threshold voltage (Vth). Al<sub>2</sub>O<sub>3</sub>’s radiation sensitivity varies, with reported values from 0.0020&#xa0;mV/Gy to 1.0&#xa0;mV/Gy. This study measured 0.0035&#xa0;mV/Gy. Comparatively, SiO<sub>2</sub> and non-ALD SiO<sub>2</sub> showed higher sensitivity, while HfO<sub>2</sub> demonstrated lower sensitivity.</p>

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Annealing and radiation effects on electrical properties of ALD-grown Al2O3 MOSCAPs: insights from C–V and G–V measurements

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年5月27日

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  • Ramazan Lok

摘要

The annealing process impacts the electrical properties of Al2O3 MOSCAPs by altering defect densities and interface trap states. Annealing at 500 °C enhances structural integrity and optimizes capacitance, while higher temperatures lead to crystallization, increased interface defects, and SiO2 interlayer formation, reducing capacitance. C–V and G–V measurements analyze interface states, series resistance, and oxide quality. To eliminate series resistance effects and determine electrical properties accurately, the Nicollian and Goetzberger method should be used. As frequency increases, the rearrangement time of trapped charges decreases, shifting the diffusion potential to more negative values. At high frequencies, interface state influence weakens, enabling more accurate doping concentration (Nd) determination, while barrier potential (ΦB) decreases and carrier mobility increases. Radiation exposure reduces capacitance due to defect formation, altered charge carrier dynamics, and dielectric degradation. Radiation-induced positive charge accumulation and increased interface state density (Nit) cause a negative C–V curve shift and lower threshold voltage (Vth). Al2O3’s radiation sensitivity varies, with reported values from 0.0020 mV/Gy to 1.0 mV/Gy. This study measured 0.0035 mV/Gy. Comparatively, SiO2 and non-ALD SiO2 showed higher sensitivity, while HfO2 demonstrated lower sensitivity.