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<p>The present study examines the specific contact resistance between the ITO electrode and IGZO semiconductor using the transmission line method (TLM). ITO electrodes with varying channel lengths were patterned through standard photolithography, and sol–gel-derived IGZO thin films were deposited using the spin-coating method onto these lines. X-ray diffraction (XRD) analysis showed that while the IGZO films were predominantly amorphous, a distinct hump at 31.8º due to the ZnO phase is also observed. X-ray photoelectron spectroscopy (XPS) confirmed the oxidation states of In, Ga, and Zn as + 3, + 3, and + 2, respectively. Additionally, a minor amount of residual M-OR or M-OH species was detected in the films, which could be removed by thermal treatment, albeit at the cost of maintaining their amorphous structure. The IGZO thin films exhibited smooth, uniform, and crack-free surfaces, with a root mean square roughness of 6.82&#xa0;nm over a 10&#xa0;µm × 10&#xa0;µm area. However, a high specific contact resistance of 0.462 Ω·cm<sup>2</sup> was measured between ITO and IGZO. This elevated contact resistance adversely affected the performance of IGZO-based TFTs, manifesting as delayed linear regions and kinks in the output characteristics. These findings highlight that ITO is not an ideal electrode for IGZO devices, underscoring the need for surface modifications and interface engineering to enhance charge transport before adopting it for IGZO-based semiconductor applications.</p>

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Analysis of specific contact resistance between ITO/IGZO interface and its influence on IGZO transistor performance

  • 期刊论文

  • 发表日期：

    2025年5月28日

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  • Ishan Choudhary,
  • Sunita Mehta

摘要

The present study examines the specific contact resistance between the ITO electrode and IGZO semiconductor using the transmission line method (TLM). ITO electrodes with varying channel lengths were patterned through standard photolithography, and sol–gel-derived IGZO thin films were deposited using the spin-coating method onto these lines. X-ray diffraction (XRD) analysis showed that while the IGZO films were predominantly amorphous, a distinct hump at 31.8º due to the ZnO phase is also observed. X-ray photoelectron spectroscopy (XPS) confirmed the oxidation states of In, Ga, and Zn as + 3, + 3, and + 2, respectively. Additionally, a minor amount of residual M-OR or M-OH species was detected in the films, which could be removed by thermal treatment, albeit at the cost of maintaining their amorphous structure. The IGZO thin films exhibited smooth, uniform, and crack-free surfaces, with a root mean square roughness of 6.82 nm over a 10 µm × 10 µm area. However, a high specific contact resistance of 0.462 Ω·cm2 was measured between ITO and IGZO. This elevated contact resistance adversely affected the performance of IGZO-based TFTs, manifesting as delayed linear regions and kinks in the output characteristics. These findings highlight that ITO is not an ideal electrode for IGZO devices, underscoring the need for surface modifications and interface engineering to enhance charge transport before adopting it for IGZO-based semiconductor applications.