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<p>Full intermetallic compound (IMC) interconnects have emerged as a promising die-attach solution for third-generation semiconductor power devices due to their superior high-temperature stability. This study demonstrated the fabrication of Cu/(Cu,Ni)<sub>6</sub>Sn<sub>5</sub>/Cu full IMC interconnects using the current driven bonding (CDB) method with Sn-0.1Ni solder, focusing on microstructural evolution and electromigration (EM) resistance. Systematic analysis of liquid–solid EM behavior under high current stressing (1.0 × 10<sup>4</sup> A/cm<sup>2</sup>) revealed that the dopant of Ni significantly suppressed the growth of anode (Cu,Ni)<sub>3</sub>Sn IMCs, yielding a thickness of 1.54&#xa0;µm compared to 3.13&#xa0;µm for the cathode Cu<sub>3</sub>Sn IMCs. EM testing (150&#xa0;°C, 1.0 × 10<sup>4</sup> A/cm<sup>2</sup>, 500&#xa0;h) demonstrated exceptional stability, with the anode (Cu,Ni)<sub>3</sub>Sn IMCs increasing by only 0.47&#xa0;μm versus 1.95&#xa0;µm for the cathode Cu<sub>3</sub>Sn IMCs, and limited coarsening of (Cu,Ni)<sub>6</sub>Sn<sub>5</sub> grains, with an average grain size of 11.72&#xa0;µm in as-fabricated state increasing to 15.08&#xa0;µm after current stressing. High shear strength was achieved for as-fabricated full (Cu,Ni)<sub>6</sub>Sn<sub>5</sub> IMC interconnects (58.7&#xa0;MPa) and was maintained after aging (55.5&#xa0;MPa) and current stressing (51.3&#xa0;MPa). These results highlight the CDB method with Sn-0.1Ni solder as an effective strategy for fabricating full IMC interconnects with high strength and enhanced EM reliability.</p>

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Effects of Ni addition on microstructure and reliability of full (Cu,Ni)6Sn5 IMC interconnects

  • 期刊论文

  • 发表日期：

    2025年5月25日

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  • P. Liu,
  • J. Ren,
  • M. L. Huang

摘要

Full intermetallic compound (IMC) interconnects have emerged as a promising die-attach solution for third-generation semiconductor power devices due to their superior high-temperature stability. This study demonstrated the fabrication of Cu/(Cu,Ni)6Sn5/Cu full IMC interconnects using the current driven bonding (CDB) method with Sn-0.1Ni solder, focusing on microstructural evolution and electromigration (EM) resistance. Systematic analysis of liquid–solid EM behavior under high current stressing (1.0 × 104 A/cm2) revealed that the dopant of Ni significantly suppressed the growth of anode (Cu,Ni)3Sn IMCs, yielding a thickness of 1.54 µm compared to 3.13 µm for the cathode Cu3Sn IMCs. EM testing (150 °C, 1.0 × 104 A/cm2, 500 h) demonstrated exceptional stability, with the anode (Cu,Ni)3Sn IMCs increasing by only 0.47 μm versus 1.95 µm for the cathode Cu3Sn IMCs, and limited coarsening of (Cu,Ni)6Sn5 grains, with an average grain size of 11.72 µm in as-fabricated state increasing to 15.08 µm after current stressing. High shear strength was achieved for as-fabricated full (Cu,Ni)6Sn5 IMC interconnects (58.7 MPa) and was maintained after aging (55.5 MPa) and current stressing (51.3 MPa). These results highlight the CDB method with Sn-0.1Ni solder as an effective strategy for fabricating full IMC interconnects with high strength and enhanced EM reliability.