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<p>The Au/(PEG:Er–MnFe<sub>2</sub>O<sub>4</sub>)/n–Si junctions have been constructed and their possible charge/current transport mechanisms (CTMs) investigated across temperatures ranging from 80 to 340&#xa0;K and a ± 3&#xa0;V bias range using the I–V measurements. The forward bias semi-logarithmic I–V curves exhibited two distinct linear regimes. The semilogarithmic I–V characteristics show that while ideality factor (<i>n</i>) declines with inclining temperature, barrier height (BH) inclines. The thermionic emission model with double Gaussian dispersion (DGD) of the BHs was able to successfully explain such temperature-dependent changes in the BH and n. Plots of Φ<sub>B0</sub>-q/2kT, Φ<sub>B0</sub>-n, and n<sup>−1</sup>-q/2kT curves showed two linear-portions, indicative of a DGD. These findings suggest that the fabricated Au/(PEG:Er–MnFe<sub>2</sub>O<sub>4</sub>)/n–Si diode could serve effectively as a temperature-sensor (TS) in whole temperature range. The distribution profile of the interface traps (D<sub>it</sub>) in the forbidden energy band was obtained from the Card&amp;Rhoderick model by utilizing I–V data, considering the voltage-dependent Φ<sub>B</sub>(V) and n(V) values for each temperature. The observed declines with inclining temperature and shifting positions of them was attributed to the restructure/reorder of D<sub>it</sub> under the temperature effect. The obtained results suggest that the fabricated these structures are very sensitive to temperature and voltage and so can be used as a temperature application.</p>

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On the possible current transport mechanisms, Energy-dependent distribution profile of interface states, and temperature sensitivity in Au/(PEG:Er–MnFe2O4)/n–Si structures

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年5月26日

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  • H. G. Çetinkaya,
  • Yusuf Badali,
  • Ş. Altındal

摘要

The Au/(PEG:Er–MnFe2O4)/n–Si junctions have been constructed and their possible charge/current transport mechanisms (CTMs) investigated across temperatures ranging from 80 to 340 K and a ± 3 V bias range using the I–V measurements. The forward bias semi-logarithmic I–V curves exhibited two distinct linear regimes. The semilogarithmic I–V characteristics show that while ideality factor (n) declines with inclining temperature, barrier height (BH) inclines. The thermionic emission model with double Gaussian dispersion (DGD) of the BHs was able to successfully explain such temperature-dependent changes in the BH and n. Plots of ΦB0-q/2kT, ΦB0-n, and n−1-q/2kT curves showed two linear-portions, indicative of a DGD. These findings suggest that the fabricated Au/(PEG:Er–MnFe2O4)/n–Si diode could serve effectively as a temperature-sensor (TS) in whole temperature range. The distribution profile of the interface traps (Dit) in the forbidden energy band was obtained from the Card&Rhoderick model by utilizing I–V data, considering the voltage-dependent ΦB(V) and n(V) values for each temperature. The observed declines with inclining temperature and shifting positions of them was attributed to the restructure/reorder of Dit under the temperature effect. The obtained results suggest that the fabricated these structures are very sensitive to temperature and voltage and so can be used as a temperature application.