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<p>The paper presents the study of the Al–Ti–TiO<sub>x</sub>–Si structure with an n–TiO<sub>x</sub>/p–Si heterojunction. The TiO<sub>x</sub> layer was formed using the atomic layer deposition method; its thickness was 20&#xa0;nm. Electron microscopy, Auger spectroscopy, and Raman scattering were used to study the layers and the composition of the structures. It was found that titanium oxide in the structure under study is conductive for electrons. Its conductivity is due to a large number of defects with a concentration of ~ 10<sup>18</sup>&#xa0;cm<sup>−3</sup>. Titanium oxide partially crystallized in the anatase phase, which led to the appearance of elongated nanocrystals oriented along the growth direction. The main mechanism of current transfer under forward bias is space–charge–limited currents in titanium oxide through traps with a Gaussian distribution. Under reverse bias, the current is caused by tunneling–generation processes involving electron–phonon interaction, occurring through generation–recombination centers in silicon.</p>

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Charge carrier transport in silicon heterojunctions with a 20 nm thick titanium oxide layer grown by atomic layer deposition

  • 期刊论文

  • 发表日期：

    2025年5月20日

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  • Sergey V. Bulyarskiy,
  • Alexander V. Lakalin,
  • Kristina I. Litvinova,
  • Grigory A. Rudakov,
  • Georgy G. Gusarov,
  • Andrey P. Orlov

摘要

The paper presents the study of the Al–Ti–TiOx–Si structure with an n–TiOx/p–Si heterojunction. The TiOx layer was formed using the atomic layer deposition method; its thickness was 20 nm. Electron microscopy, Auger spectroscopy, and Raman scattering were used to study the layers and the composition of the structures. It was found that titanium oxide in the structure under study is conductive for electrons. Its conductivity is due to a large number of defects with a concentration of ~ 1018 cm−3. Titanium oxide partially crystallized in the anatase phase, which led to the appearance of elongated nanocrystals oriented along the growth direction. The main mechanism of current transfer under forward bias is space–charge–limited currents in titanium oxide through traps with a Gaussian distribution. Under reverse bias, the current is caused by tunneling–generation processes involving electron–phonon interaction, occurring through generation–recombination centers in silicon.