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<p>Bi<sub>2</sub>Te<sub>3</sub>-based alloys, including p-type (Bi,Sb)<sub>2</sub>Te<sub>3</sub> and n-type Bi<sub>2</sub>(Te,Se)<sub>3</sub>, are the most widely used thermoelectric (TE) materials. Eutectic Sn-58 wt.%Bi solder is commonly employed for assembling p-n pairs in commercial TE modules. This study systematically investigates the interfacial reactions of Sn-58Bi solder with p-type and n-type TE substrates under various temperatures and aging durations. In addition, the growth kinetics of intermetallic compounds (IMCs) are analyzed to better understand the interfacial behavior. In the liquid-state reaction with p-type (Bi,Sb)<sub>2</sub>Te<sub>3</sub>, the formed SnTe phase exhibited a porous microstructure composed of fine grains. Notably, the IMC growth followed a linear relationship with aging time, indicating a reaction-limited growth mechanism. The porous structure likely facilitated the rapid diffusion of Sn through the SnTe layer, thereby reducing diffusion resistance and accelerating the interfacial reaction. In the solid-state reactions with (Bi,Sb)<sub>2</sub>Te<sub>3</sub>, the dense SnTe phase gradually thickened with aging time, exhibiting diffusion-controlled parabolic growth behavior. Prolonged aging cause substantial Sn depletion from the solder, leading to the accumulation of a thick Bi layer at the interface. In both liquid-state and solid-state reactions with n-type Bi<sub>2</sub>(Te,Se)<sub>3</sub>, the SnTe phase and an underlying thin BiTe layer formed simultaneously. Notably, the formation of these IMC phases was significantly suppressed compared to those observed in reactions with p-type (Bi,Sb)<sub>2</sub>Te<sub>3</sub>. In both cases, the IMCs exhibited diffusion-controlled growth behavior. The corresponding growth kinetics parameters, including activation energies and growth rate constants, were also determined.</p>

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Interfacial reactions and growth kinetics of Sn-58Bi solder with p-type (Bi,Sb)2Te3 and n-type Bi2(Te,Se)3 thermoelectric materials

  • 期刊论文

  • 发表日期：

    2025年5月23日

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  • Chao-hong Wang,
  • Chun-wei Chiu

摘要

Bi2Te3-based alloys, including p-type (Bi,Sb)2Te3 and n-type Bi2(Te,Se)3, are the most widely used thermoelectric (TE) materials. Eutectic Sn-58 wt.%Bi solder is commonly employed for assembling p-n pairs in commercial TE modules. This study systematically investigates the interfacial reactions of Sn-58Bi solder with p-type and n-type TE substrates under various temperatures and aging durations. In addition, the growth kinetics of intermetallic compounds (IMCs) are analyzed to better understand the interfacial behavior. In the liquid-state reaction with p-type (Bi,Sb)2Te3, the formed SnTe phase exhibited a porous microstructure composed of fine grains. Notably, the IMC growth followed a linear relationship with aging time, indicating a reaction-limited growth mechanism. The porous structure likely facilitated the rapid diffusion of Sn through the SnTe layer, thereby reducing diffusion resistance and accelerating the interfacial reaction. In the solid-state reactions with (Bi,Sb)2Te3, the dense SnTe phase gradually thickened with aging time, exhibiting diffusion-controlled parabolic growth behavior. Prolonged aging cause substantial Sn depletion from the solder, leading to the accumulation of a thick Bi layer at the interface. In both liquid-state and solid-state reactions with n-type Bi2(Te,Se)3, the SnTe phase and an underlying thin BiTe layer formed simultaneously. Notably, the formation of these IMC phases was significantly suppressed compared to those observed in reactions with p-type (Bi,Sb)2Te3. In both cases, the IMCs exhibited diffusion-controlled growth behavior. The corresponding growth kinetics parameters, including activation energies and growth rate constants, were also determined.