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<p>Gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) is an ultra-wide band gap material which has been receiving increasing interest for its potential applications in power electronics, ultraviolet (UV) photodetectors, and gas sensors. In this study, we have synthesized <i>β</i>-phase Ga<sub>2</sub>O<sub>3</sub> on n-Si substrate using the electrodeposition technique, and investigated its properties for&#xa0;use in photodetector applications for broadband detection combining Si and Ga<sub>2</sub>O<sub>3</sub>. X-ray diffractometer (XRD), scanning electron microscope (SEM) with energy dispersive x-ray (EDX) analysis were conducted to illuminate structural and morphological behaviors of the&#xa0;Ga<sub>2</sub>O<sub>3</sub>. Ag metallic contacts on the Ga<sub>2</sub>O<sub>3</sub>/n-Si junction and Al ohmic contact on the back surface of the n-Si were obtained by thermal evaporation technique. Thus, Ag/Ga<sub>2</sub>O<sub>3</sub>/n-Si Schottky-type photodetectors were fabricated and characterized by current–voltage (<i>I-V</i>) measurements depending on various light power intensities and wavelengths ranging from UV to near-infrared (NIR). The diode characteristics, as well as the photodetection parameters such as responsivity, specific detectivity, and external quantum efficiency (<i>EQE</i>) were determined and discussed in detail. The Ag/Ga<sub>2</sub>O<sub>3</sub>/n-Si Schottky-type photodetectors showed high performances: 122.88 A/W responsivity, 1.07 × 10<sup>12</sup> Jones specific detectivity, and very high <i>EQE</i> value of 2.18 × 10<sup>4</sup>% at 700&#xa0;nm wavelength. The obtained Ag/Ga<sub>2</sub>O<sub>3</sub>/n-Si Schottky-type photodetector exhibits promising potential as a candidate for optoelectronic applications in the visible range. These photodetectors can be used in visible light communication, light sensing and cameras.</p>

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Ag/Ga2O3/n-Si Schottky-type photodetector for visible light detection

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  • 发表日期：

    2025年5月23日

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  • Mehmet Yilmaz,
  • Adem Kocyigit,
  • Erman Erdogan,
  • Murat Yıldırım,
  • Maria Luisa Grilli

摘要

Gallium oxide (Ga2O3) is an ultra-wide band gap material which has been receiving increasing interest for its potential applications in power electronics, ultraviolet (UV) photodetectors, and gas sensors. In this study, we have synthesized β-phase Ga2O3 on n-Si substrate using the electrodeposition technique, and investigated its properties for use in photodetector applications for broadband detection combining Si and Ga2O3. X-ray diffractometer (XRD), scanning electron microscope (SEM) with energy dispersive x-ray (EDX) analysis were conducted to illuminate structural and morphological behaviors of the Ga2O3. Ag metallic contacts on the Ga2O3/n-Si junction and Al ohmic contact on the back surface of the n-Si were obtained by thermal evaporation technique. Thus, Ag/Ga2O3/n-Si Schottky-type photodetectors were fabricated and characterized by current–voltage (I-V) measurements depending on various light power intensities and wavelengths ranging from UV to near-infrared (NIR). The diode characteristics, as well as the photodetection parameters such as responsivity, specific detectivity, and external quantum efficiency (EQE) were determined and discussed in detail. The Ag/Ga2O3/n-Si Schottky-type photodetectors showed high performances: 122.88 A/W responsivity, 1.07 × 1012 Jones specific detectivity, and very high EQE value of 2.18 × 104% at 700 nm wavelength. The obtained Ag/Ga2O3/n-Si Schottky-type photodetector exhibits promising potential as a candidate for optoelectronic applications in the visible range. These photodetectors can be used in visible light communication, light sensing and cameras.