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<p>CsPbBr<sub>3</sub> perovskite solar cells (PSCs) have garnered significant interest because of their remarkable long-term stability and straightforward manufacturing process in humid conditions. Ion movement inside the perovskite film induces hysteresis, adversely affecting device performance and facilitating film degradation. This limits the future enhancement of power conversion efficiency (PCE) in CsPbBr<sub>3</sub> PSCs. This study presents a new inorganic fluorine-containing additive, rubidium bromide (RbBr), as a precursor. The incorporation of RbBr into the CsPbBr<sub>3</sub> perovskite film improved crystallisation kinetics and decreased hysteresis. The addition of 0.04&#xa0;M RbBr effectively suppresses defects in the CsPbBr<sub>3</sub> perovskite layer and substantially improves carrier dynamics. Furthermore, there is a large reduction in non-radiative recombination, resulting in a substantial improvement in device stability. Moreover, a notable decrease in non-radiative recombination has been observed, resulting in a substantial improvement in device stability. The incorporation of 0.04 RbBr into CsPbBr<sub>3</sub> leads to a decrease in the hysteresis index of PSCs to 0.016. The incorporation of RbBr significantly improves device performance, attaining an optimal efficiency of 8.11%. The enhancement of environmental stability has been markedly achieved with RbBr doping. </p>

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Synergistic effects of rubidium bromide on CsPbBr₃ perovskite solar cell performance

  • 期刊论文

  • 发表日期：

    2025年5月20日

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  • Pratik Debnath,
  • Avijit Talukdar,
  • Joy Sarkar,
  • Suman Chatterjee

摘要

CsPbBr3 perovskite solar cells (PSCs) have garnered significant interest because of their remarkable long-term stability and straightforward manufacturing process in humid conditions. Ion movement inside the perovskite film induces hysteresis, adversely affecting device performance and facilitating film degradation. This limits the future enhancement of power conversion efficiency (PCE) in CsPbBr3 PSCs. This study presents a new inorganic fluorine-containing additive, rubidium bromide (RbBr), as a precursor. The incorporation of RbBr into the CsPbBr3 perovskite film improved crystallisation kinetics and decreased hysteresis. The addition of 0.04 M RbBr effectively suppresses defects in the CsPbBr3 perovskite layer and substantially improves carrier dynamics. Furthermore, there is a large reduction in non-radiative recombination, resulting in a substantial improvement in device stability. Moreover, a notable decrease in non-radiative recombination has been observed, resulting in a substantial improvement in device stability. The incorporation of 0.04 RbBr into CsPbBr3 leads to a decrease in the hysteresis index of PSCs to 0.016. The incorporation of RbBr significantly improves device performance, attaining an optimal efficiency of 8.11%. The enhancement of environmental stability has been markedly achieved with RbBr doping.