Investigation of the effect of single walled carbon nanotube (SWCNT) on semiconducting properties of turmeric dye based Schottky device: a space charge limited conduction approach
摘要
This work studies semiconducting electrical properties of Turmeric dye (TR) based Schottky device and the effect of Single Wall Carbon Nanotube (SWCNT) on it in the temperature range from 303 to 343 K. ITO/TR/Al and ITO/TR + SWCNT/Al configuration were fabricated utilizing the spin coating technique and current–voltage measurements has been performed. SCLC approach has been utilised to estimate device parameters such as conductivity, barrier height, series resistance and rectification ratio. Considering exponential trap distributions, significant parameters like trap concentration, characteristic temperature, trap centre density were estimated from temperature-dependent current density and effect of SWCNT on these parameters has been shown. It is seen that after incorporating nanotube, the parameters show significant improvement. The results will provide valuable insights for future utilization of thin film devices incorporating herbal dye-based materials.