<p>This study presents the results of electrical conductivity measurements for glasses from the Sb<sub>x</sub>As<sub>37-x</sub>S<sub>48</sub>I<sub>15</sub> system, conducted in both DC and AC regimes. Measurements were carried out on both amorphous and annealed samples, with crystallization of SbSI and Sb<sub>2</sub>S<sub>3</sub> structural units induced in the latter. The findings reveal that the conductivity of the annealed samples is several times higher than that of the amorphous samples, which could be crucial information for applications in electronics, such as memory devices. The temperature dependence of conductivity follows Arrhenius behavior, with the activation energy <i>E</i><sub><i>DC</i></sub> determined by fitting the DC conductivity data to the temperature variation. This activation energy decreases as the proportion of antimony increases. Frequency-dependent conductivity tests revealed that conductivity rises with higher temperature, increased antimony content, and frequency. Measurements were taken across a frequency range of 0 to 10<sup>5</sup>&#xa0;Hz and a temperature range from room temperature to 398&#xa0;K. The <i>E</i><sub><i>AC</i></sub> values at 100&#xa0;Hz and 1000&#xa0;Hz were also obtained, indicating complex relaxation mechanisms in this regime. Impedance spectra were analyzed using an equivalent circuit model, allowing the determination of relaxation time values and the activation energies associated with the relaxation process. The presence of a temperature-dependent electrical relaxation phenomenon of the non-Debye type was confirmed. Additionally, the effects of frequency and temperature on the loss factor (<i>ε′′</i>) were analyzed within the measured frequency range.</p>

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Influence of structural changes on electrical properties of glasses from the SbxAs37-xS48I15 system

  • Goran R. Štrbac,
  • Ondrej Bošák,
  • Dragana D. Štrbac,
  • Marian Kubliha,
  • Martin Sahul

摘要

This study presents the results of electrical conductivity measurements for glasses from the SbxAs37-xS48I15 system, conducted in both DC and AC regimes. Measurements were carried out on both amorphous and annealed samples, with crystallization of SbSI and Sb2S3 structural units induced in the latter. The findings reveal that the conductivity of the annealed samples is several times higher than that of the amorphous samples, which could be crucial information for applications in electronics, such as memory devices. The temperature dependence of conductivity follows Arrhenius behavior, with the activation energy EDC determined by fitting the DC conductivity data to the temperature variation. This activation energy decreases as the proportion of antimony increases. Frequency-dependent conductivity tests revealed that conductivity rises with higher temperature, increased antimony content, and frequency. Measurements were taken across a frequency range of 0 to 105 Hz and a temperature range from room temperature to 398 K. The EAC values at 100 Hz and 1000 Hz were also obtained, indicating complex relaxation mechanisms in this regime. Impedance spectra were analyzed using an equivalent circuit model, allowing the determination of relaxation time values and the activation energies associated with the relaxation process. The presence of a temperature-dependent electrical relaxation phenomenon of the non-Debye type was confirmed. Additionally, the effects of frequency and temperature on the loss factor (ε′′) were analyzed within the measured frequency range.